0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMFTN138

MMFTN138

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MMFTN138 - N-Channel Logic Level Enhancement Mode Field Effect Transistor - SEMTECH ELECTRONICS LTD.

  • 数据手册
  • 价格&库存
MMFTN138 数据手册
MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 20 KΩ) Gate-Source Voltage - Continuous Gate-Source Voltage - Non-Repetitive (TP < 50 µs) Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation Operating and Storage Temperature Range Symbol VDSS VDGR VGSS Value 50 50 ± 20 ± 40 220 880 360 - 55 to + 150 Unit V V V ID Ptot Tj, Ts mA mW O C Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient Symbol RθJA Value 350 Unit K/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 MMFTN138 Characteristics at Ta = 25 OC unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Drain-Source Leakage Current at VDS = 50 V at VDS = 30 V Gate-Source Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VGS = VDS, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 220 mA at VGS = 4.5 V, ID = 220 mA Forward Transconductance at VDS = 10 V, ID = 220 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn-On Delay Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-On Rise Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-Off Delay Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Turn-Off Fall Time at VDD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω Drain-Source Diode Characteristics and Maximum Ratings Parameter Maximum Continuous Source Current Maximum Pulse Source Current Drain-Source Diode Forward Voltage at IS = 440 mA Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Min. 50 0.8 0.12 Max. 500 100 ± 100 1.6 3.5 6 60 25 10 8 12 16 22 Unit V nA nA V Ω S pF pF pF ns ns ns ns Symbol IS ISM VGD Min. - Max. 220 880 1.4 Unit mA mA V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006
MMFTN138 价格&库存

很抱歉,暂时无法提供与“MMFTN138”相匹配的价格&库存,您可以联系我们找货

免费人工找货