MMFTN20

MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features • High-speed switching • No secondary breakdown Applications • Thin and thick film circuits • General purpose fast switching applications 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage (open drain) Drain Current Peak Drain Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VDS VGSO ID IDM Ptot Ptot Tj Ts 1) 2) Value 50 ± 20 100 300 300 250 150 - 65 to + 150 Unit V V mA mA mW mW O C C O Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient 1) 2) Symbol RθJA RθJA Value 430 500 1) 2) Unit K/W K/W Device mounted on a ceramic substrate 10 X 8 X 0.7 mm. Device mounted on a printed-circuit board. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006 MMFTN20 Characteristics at Ta = 25 OC unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 10 µA Drain-Source Leakage Current at VDS = 40 V Gate-Source Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 100 mA at VGS = 5 V, ID = 100 mA at VGS = 2.5 V, ID = 10 mA Forward Transfer Admittance at VDS = 10 V, ID = 100 mA Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Turn-On Time at VGS = 0 to 10 V, VDD = 20 V, ID = 100 mA Turn-Off Time at VGS = 10 to 0 V, VDD = 20 V, ID = 100 mA Symbol V(BR)DSS IDSS IGSS VGS(th) Min. 50 0.4 40 Max. 1 ± 100 1.8 15 20 30 15 15 5 5 10 Unit V µA nA V RDS(on) Ω |yfs| Ciss Coss Crss t(on) t(off) mS pF pF pF ns ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 01/06/2006