MPS3638A

MPS3638A

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MPS3638A - PNP Silicon Epitaxial Planar Transistor - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
MPS3638A 数据手册
MPS3638A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Symbol hFE hFE hFE hFE -ICES -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -VCEsat -VBEsat -VBEsat fT Ccbo Value 25 25 4 500 625 150 - 55 to + 150 Min. 80 100 100 20 25 25 4 0.8 150 Max. 35 35 0.25 1 1.1 2 10 Unit V V V mA mW O C C Unit nA nA V V V V V V V MHz pF O Characteristics at Ta = 25 C O Parameter DC Current Gain at -VCE = 10 V, -IC = 1 mA at -VCE = 10 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 2 V, -IC = 300 mA Collector Cutoff Current at -VCE = 15 V Emitter Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 2.5 mA at -IC = 300 mA, -IB = 30 mA Base Emitter Saturation Voltage at -IC = 50 mA, -IB = 2.5 mA at -IC = 300 mA, -IB = 30 mA Gain Bandwidth Product at -VCE = 3 V, -IC = 50 mA, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/03/2007 MPS3638A DC Current Gain Collector Saturation Region "On" Voltages SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/03/2007
MPS3638A
物料型号: - 型号为MPS3638A。

器件简介: - MPS3638A是一种用于开关和放大应用的PNP硅外延平面晶体管。

引脚分配: - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector) - 封装类型为TO-92塑料封装,重量约为0.19克。

参数特性: - 绝对最大额定值(在25°C环境温度下): - 集电极-基极电压(VCBO):25V - 集电极-发射极电压(VCEO):25V - 发射极-基极电压(VEBO):4V - 集电极电流(IC):500mA - 总功耗(Ptot):625mW - 结温(Tj):150°C - 存储温度范围(Ts):-55至+150°C

- 25°C时的特性(最小值/最大值): - DC电流增益(hFE)在不同条件下的范围:20至100 - 集电极截止电流(ICES):至多35nA - 发射极截止电流(IEBO):至多35nA - 集电极-基极击穿电压(V(BR)CBO):25V - 集电极-发射极击穿电压(V(BR)CEO):25V - 发射极-基极击穿电压(V(BR)EBO):4V - 集电极-发射极饱和电压(VcEsat):0.25V至1V - 基极-发射极饱和电压(VBEsat):0.8V至2V - 增益带宽积(fT):150MHz - 输出电容(Ccbo):至多10pF

功能详解: - 该晶体管主要用于开关和放大功能,具有特定的电流增益和电压特性。

应用信息: - 适用于开关和放大应用。

封装信息: - 封装类型为TO-92塑料封装。
MPS3638A 价格&库存

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