MPSA43

MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value MPSA 42 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Device Dissipation @ Ta=25℃ Derate above 25℃ Total Device Dissipation @ Tc=25℃ Derate above 25℃ Junction Temperature Storage Temperature Range Ptot Tj TS Ptot VCBO VCEO VEBO IC 300 300 6 500 625 5.0 1.5 12 150 -55 to +150 MPSA 43 200 200 V V V mA mW mW/℃ W mW/℃ O O Unit C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004 MPSA 42 / 43 Characteristics at Tamb=25 oC Symbol DC Current Gain at IC=1mA,VCE=10V at IC=10mA,VCE=10V at IC=30mA,VCE=10V Emitter Cutoff Current at VEB=6V VEB=4V Collector Cutoff Current at VCB=200V VCB=160V Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Saturation Voltage at IC=20mA,IB=2mA Base Saturation Voltage at IC=20mA,IB=2mA Gain Bandwidth Product at IC=10mA ,VCE=20V,f=100MHz Collector Output Capacitance at VCB=20V,f=1MHz MPSA 42 MPSA 43 Cob Cob 3 4 pF pF fT 50 MHz VBE(sat) 0.9 V VCE(sat) 0.5 V V(BR)EBO 6 V MPSA 42 MPSA 43 V(BR)CEO V(BR)CEO 300 200 V V MPSA 42 MPSA 43 V(BR)CBO V(BR)CBO 300 200 V V MPSA 42 MPSA 43 ICBO ICBO 0.1 0.1 μA μA MPSA 42 MPSA 43 IEBO IEBO 0.1 0.1 μA μA hFE hFE hFE 25 40 40 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004 MPSA 42 / 43 120 hFE, DC Current Gain 100 80 60 40 TJ=+125°C VCE =10V TJ=25°C TJ=-55°C 20 0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 1. DC Current Gain C, Capacitance (pF) 100 Ceb @ 1MHz 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 VR, Reverse Voltage (volts) Figure 2. Capacitance 1.4 1.2 A VBE(sat) @-55°C, IC/IB=10 B VBE(on) @ -55°C,VCE=10V C VBE(sat) @ 125°C,IC/IB=10 D VBE(sat) @ 25°C,IC/IB=10 E VBE(on) @ 125°C,VCE=10V F VBE(on) @ 25°C,VCE=10V G VCE(sat) @ 125°C,IC/IB=10 H VCE(sat) @ 25°C,IC/IB=10 I VCE(sat) @ -55°C,IC/IB=10 0.1 1.0 10 100 V, Voltage (volts) 1.0 0.8 0.6 0.4 0.2 0.0 IC, Collector Current (mA) Figure 3."on" Voltages SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/06/2004