MPSA64

MPSA64

  • 厂商:

    SEMTECH_ELEC

  • 封装:

  • 描述:

    MPSA64 - MPSA63 - SEMTECH ELECTRONICS LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
MPSA64 数据手册
MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCES -VEBO -IC Ptot Tj TS Value 30 30 10 500 625 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 100 µA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA MPSA63 MPSA64 MPSA63 MPSA64 Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CES -VCE(sat) VBE(on) fT Min. 5000 10000 10000 20000 30 125 Max. 100 100 1.5 2 Unit nA nA V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2007 MPSA63 / 64 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2007
MPSA64
1. 物料型号: - MPSA63 / 64

2. 器件简介: - PNP型硅外延平面晶体管,用于高增益放大的达林顿晶体管。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 基极(Base) - 3. 集电极(Collector) - 封装为TO-92塑料封装,重量约为0.19克。

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(-VCBO):30V - 集电极-发射极电压(-VCES):30V - 发射极-基极电压(-VEBO):10V - 集电极电流(-IC):500mA - 总功率耗散(Ptot):625mW - 结温(T):150℃ - 存储温度范围(Ts):-55至+150℃ - 特征参数在Ta=25℃时: - DC电流增益(hFE): - MPSA63:5000(-VcE=5V,-Ic=10mA) - MPSA64:10000(-Vce=5V,-Ic=100mA) - MPSA63/64:10000/20000(-Vce=5V,-Ic=100mA) - 集电极截止电流(-ICBO):100nA(-VcB=30V) - 发射极截止电流(-IEBO):100nA(-VEB=10V) - 集电极-发射极击穿电压(-V(BR)CES):30V(-Ic=100μA) - 集电极-发射极饱和电压(-VcE(sat)):1.5V(-Ic=100mA,-Ib=100μA) - 基极-发射极导通电压(VBE(on)):2V(-VcE=5V,-Ic=100mA) - 转换频率(fT):125MHz(-VcE=5V,Ic=10mA)

5. 功能详解: - 该晶体管为PNP型达林顿晶体管,具有高增益特性,适用于需要高电流增益和高功率处理能力的应用场合。

6. 应用信息: - 适用于高增益放大,具体应用场景未在文档中详细说明。

7. 封装信息: - TO-92塑料封装,重量约为0.19克。
MPSA64 价格&库存

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