MPSA93

MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value MPSA 92 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Device Dissipation @ Ta=25℃ Derate above 25℃ Total Device Dissipation @ Tc=25℃ Derate above 25℃ Junction Temperature Storage Temperature Range Ptot Tj TS Ptot -VCBO -VCEO -VEBO -IC 300 300 5 500 625 5 1.5 12 150 -55 to +150 MPSA 93 200 200 V V V mA mW mW/℃ W mW/℃ O O Unit C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/06/2004 MPSA 92 / 93 Characteristics at Tamb=25 oC Symbol DC Current Gain at -IC=1mA, -VCE=10V at -IC=10mA, -VCE=10V at -IC=30mA, -VCE=10V Emitter Cutoff Current at -VEB=3V Collector Cutoff Current at -VCB=200V at -VCB=160V Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=100μA Collector Saturation Voltage at -IC=20mA, -IB=2mA Base Saturation Voltage at -IC=20mA, -IB=2mA Gain Bandwidth Product at -IC=10mA, -VCE=20V, f=100MHz Collector Output Capacitance at -VCB=20V, f=1MHz MPSA 92 MPSA 93 Cob Cob 6 8 pF pF fT 50 MHz -VBE(sat) 0.9 V -VCE(sat) 0.5 V -V(BR)EBO 5 V MPSA 92 MPSA 93 -V(BR)CEO -V(BR)CEO 300 200 V V MPSA 92 MPSA 93 -V(BR)CBO -V(BR)CBO 300 200 V V MPSA 92 MPSA 93 -ICBO -ICBO 0.25 0.25 μA μA -IEBO 0.1 μA hFE hFE hFE 25 40 25 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/06/2004 MPSA 92 / 93 300 TJ=+125°C VCE =10V hFE, DC Current Gain 250 200 TJ=25°C 150 100 TJ=-55°C 50 0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 1. DC Current Gain f T, Current-Gain-Bandwidth (MHz) C, Capacitance (pF) 100 Cib @ 1MHz 150 130 110 90 70 50 30 10 1 3 5 7 9 11 13 15 17 19 21 VCE=20V f=20MHz TJ=25°C 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 VR, Reverse Voltage (volts) Figure 2. Capacitance Ic, Collector Current (mA) Figure 3. Current-Gain-Bandwidth SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/06/2004