PBSS4140T

PBSS4140T 30 V Low VCE(sat) NPN Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capabilities ․Improved device reliability due to reduced heat generation. APPLICATIONS ․General purpose switching and muting ․LCD backlighting ․Supply line switching circuits ․Battery driven equipment (mobile phones, video cameras and hand-held devices). Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance From Junction to Ambient Operating Ambient Temperature 1) Value 40 30 5 1 2 1 200 450 150 -65 to +150 417 278 -65 to +150 Unit V V V A A A mW O VCBO VCEO VEBO IC ICM IBM Tamb≦25OC Tamb≦25 OC 1) 2) Ptot Tj TS C C O In free air 1) In free air 2) Rth j-a Tamb K/W O C Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2) Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 PBSS4140T Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=5V, IC=1mA at VCE=5V, IC=500mA at VCE=5V, IC=1A Collector-Base Cutoff Current at VCB=40V at VCB=40V,Tamb=150 OC Collector-Emitter Cutoff Current at VCE=30V Emitter-Base Cutoff Current at VEB=5V Collector-Emitter Saturation Voltage at IC=100mA, IB=1mA at IC=500mA, IB=50mA at IC=1A, IB=100mA Equivalent on-Resistance at IC=500mA, IB=50mA; Base-Emitter Saturation Voltage at IC=1A, IB=100mA Base-Emitter Turn-on Voltage at VCE=5V, IC=1A Transition Frequency at VCE=10V, IC=50mA,f=100MHz Collector Capacitance at VCB=10V, f=1MHz CC 10 pF fT 150 HMz VBE(on) 1.1 V VBE(sat) 1.2 V RCE(sat) 260