PBSS4240

PBSS4240 40V; 2A NPN Low VCE(sat) (BISS) Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capability ․Improved device reliability due to reduced heat generation. APPLICATIONS ․Supply line switching circuits ․Battery management applications ․DC/DC converter applications ․Strobe flash units ․Heavy duty battery powered equipment (motor and lamp drivers). Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance From Junction to Ambient Operating Ambient Temperature 1) 2) Value 40 40 5 2 3 300 200 480 150 -65 to +150 417 260 -65 to +150 Unit V V V A A mA mW O VCBO VCEO VEBO IC ICM IBM Tamb≦25OC Tamb≦25 OC 1) 2) Ptot TJ TS C C O In free air 1) In free air 2) Rth j-a Tamb K/W O C Device mounted on a printed-circuit board; single sided copper; tinplated and standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1cm2. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 PBSS4240 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=100mA at VCE=2V, IC=500mA at VCE=2V, IC=1A at VCE=2V, IC=2A Collector-Base Cutoff Current at VCB=30V at VCB=30V,Tamb=150 C O Min. 350 300 250 80 - Typ. 140 230 15 Max. 100 50 100 70 100 180 180 320