RB500V-40

RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 Applications • Low current rectification 1 S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Power Dissipation Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM Ptot VR IO IFSM Tj Ts Value 45 200 40 0.1 1 125 - 40 to + 125 Unit V mW V A A O C C O Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Symbol V(BR)R VF IR CT Min. 45 Typ. 6 Max. 0.45 1 Unit V V µA pF Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB500V-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB500V-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006