RB521G-30

RB521G-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power application PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 E Top View Marking Code: "E" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.) Junction Temperature Storage Temperature Range Symbol VR IO IFSM Tj Ts Value 30 100 1 125 - 40 to + 125 Unit V mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VF IR Max. 0.35 10 Unit V µA Note: Please pay attention to static electricity when handling. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB521G-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ∠ ALL ROUND A C HE D A E bp UNIT mm A 0.70 0.60 bp 0.4 0.3 C 0.135 0.127 D 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 V 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006