RB521S-40

RB521S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power applications Features • Ultra small mold type • Low forward voltage • High reliability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Z Top View Marking Code: "Z" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 45 40 200 1 150 - 55 to + 150 Unit V V mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA at IF = 200 mA Reverse Current at VR = 10 V at VR = 40 V Symbol VF Min. 0.16 0.31 0.41 Max. 0.3 0.45 0.54 20 90 Unit V IR μA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 RB521S-40 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 RB521S-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ∠ ALL ROUND A C HE D A E bp UNIT mm A 0.70 0.60 bp 0.4 0.3 C 0.135 0.127 D 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 V 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007