RB706F-40

RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification 3 Features • High reliability • Low reverse current 1 2 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol VF IR V(BR)R CT Min. 45 Typ. 2 Max. 0.37 1 Unit V µA V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009 RB706F-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009