RB751S-40

RB751S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching and detection applications Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 D Top View Marking Code: "D" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz Symbol VF IR CT Typ. 2 Max. 0.37 0.5 Unit V µA pF Note: ESD sensitive product handling required. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB751S-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB751S-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ∠ ALL ROUND A C HE D A E bp UNIT mm A 0.70 0.60 bp 0.4 0.3 C 0.135 0.127 D 1.25 1.15 E 0.85 0.75 HE 1.7 1.5 V 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006