RN2Z

RN2Z SILICON RECTIFIER DIODE Forward Current – 2.0 Ampere Features • For pulse rectification applications Mechanical Data • Case: Resin molded Absolute Maximum Ratings and Characteristics Symbols Transient Peak Reverse Voltage Peak Reverse Voltage Average Forward Current at TC = 125 C Peak Surge Forward Current 10mS Single Half Sine Junction Temperature Storage Temperature Range Characteristics ( Ta=25oC,unless otherwise specified ) Symbol Forward Voltage Drop at IF=2A Reverse Leakage Current at VR=VRM Reverse Leakage Current Under High Temperature at VR=VRM,, Tj=150 C Reverse Recovery Time, Recovery point 90% at IF=IRP=100mA Reverse Recovery Time, Recovery point 75% at IF=100Ma,IRP=200mA Thermal Resistance Between Junction and Lead o O Rating 200 200 2 70 -40 to +150 -40 to +150 Units V V A A O O VRSM VRM IF(AV) IFSM Tj TS C C Value(max.) 0.92 50 4 100 50 12 Unit V µA mA nS nS O VF IR HIR Trr-1 Trr-2 θj-1 C/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2003