S1B

厂商：
SEMTECH_ELEC
封装：
描述：
S1B - SURFACE MOUNT GENERAL RECTIFIER - SEMTECH ELECTRONICS LTD.

数据手册：

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详情介绍
数据手册
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S1B 数据手册

S1A THRU S1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage – 50 to 1000 V Forward Current – 1 A Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Glass passivated chip junction • For surface mount application • Low profile package • Built-in strain relief, ideal for automated placement Mechanical Data • Case: SMA (DO-214AC), molded plastic • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end Absolute Maximum Ratings and Characteristics Ratings at 25O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current , 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance at VR = 4 V, f = 1 MHz Typical Thermal Resistance 1) Operating and Storage Temperature Range 1) VRRM VRMS VDC IF(AV) IFSM VF 50 35 50 100 70 100 200 140 200 400 280 400 1 30 1.1 5 50 12 75 27 600 420 600 800 560 800 1000 700 1000 V V V A A V μA pF O at TA = 25 OC at TA = 125 OC IR CJ RθJA RθJL TJ, TS C/W O - 55 to +1 50 C Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad areas SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 S1A THRU S1M FIG.1-FORWARD DERATING CURVE FIG.2- PEAK FORWARD SURGE CURRENT 100 AVERAGE FORWARD CURRENT, A PEAK FORWARD SURGE CURRENT, A 1.2 1 0.8 0.6 RESISTIVE OR INDUCTIVE LOAD TL =110 C 8.3ms Single half Sine Wave (JEDEC Method) S1(A.J) 10 S1(K.M) S1(A.J) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0.2x0.2(5.0x5.0mm) Thick copper pad areas S1(K.M) 1 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE, ( C) FIG.3-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT(A) FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT( A) 100 100 10 10 TJ=125 C 1 o 1 TJ=75 C 0.1 TJ =25 C PULSE WIDTH=300 s 1% DUTY CYCLE 0.1 0.01 0.4 0.6 0.01 TJ =25 C 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE (V) 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTS,% FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE ( oC/W) 100 JUNCTION CAPACITANCE, pF FIG.6- TRANSIENT THERMAL IMPEDANCE 1000 TJ=25 C f=1.0MHz Vsig=50mVp-p S1(K.M) 100 10 S1(A.J) 10 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 t, PULSE DURATION REVERSE VOLTAGE, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008

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S1B

1. 物料型号： - 型号范围为S1A至S1M。

2. 器件简介： - 该器件是一种表面贴装的通用整流器，具有塑料封装，符合UL94V-0可燃性等级，玻璃钝化芯片结构，适用于表面贴装应用，低轮廓设计，并内置应变消除功能，适合自动化放置。

3. 引脚分配： - 封装为SMA（DO-214AC），塑封塑料，端子为镀锡，根据MIL-STD-750方法2026可焊。 - 极性：色环表示阴极端。

4. 参数特性： - 最大重复峰值反向电压（VRRM）：50V至1000V不等。 - 最大RMS电压（VRMS）：35V至700V不等。 - 最大直流阻断电压（VDc）：50V至1000V不等。 - 最大平均正向整流电流（IF(AV)）：1A。 - 正向浪涌电流（IFSM）：30A（S1D型号）。 - 最大正向电压在1A时（VF）：约1V。 - 最大直流反向电流（IR）：5mA至50mA不等。 - 典型结电容在4V反向电压下，1MHz频率（CJ）：12pF。 - 典型热阻（RBJA/ROL）：75°C/W至27°C/W不等。

5. 功能详解： - 该整流器适用于单相半波60Hz的电阻性或感性负载，对于容性负载需降低20%的电流。 - 提供了正向和反向特性曲线，以及典型结电容的图表。

6. 应用信息： - 应用于需要整流功能的电路，如电源整流、信号整流等。

7. 封装信息： - 封装类型为SMA（DO-214AC），塑封塑料，尺寸以英寸和毫米给出。 - 热阻从结到环境，从结到安装在PCB上的引脚，安装在0.2X0.2英寸（5X5毫米）铜垫上。

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