SD103A...SD103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other uses are for click suppression, efficient full wave bridges in telephone subsets, and as blocking diodes in rechargeable low voltage battery system.
Min. 27.5
Black Cathode Band Black Part No. Black "ST" Brand
Max. 0.5
Min. 27.5 Max. 1.9
XXX
ST
Max. 3.9
This diode is also available in MiniMELF case with type designation LL103A, B, C.
Glass Case DO-35 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage SD103A SD103B SD103C
Symbol VRRM Ptot IFSM Tj TS
Value 40 30 20 400 15 125 - 55 to + 175
1)
Unit V mW A
O
Power Dissipation Single Cycle Surge 60 Hz Sine Wave Junction Temperature Storage Temperature Range
1)
C C
O
Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 20 mA at IF = 200 mA Reverse Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA to 200 mA , recover to 0.1 IR Symbol VF VF SD103A SD103B SD103C IR Typ. Max. 0.37 0.6 5 Unit V V µA
Ctot trr
50 10
-
pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
SD103A...SD103C
Typical variation of fwd. current vs.fwd.voltage for primary conduction through the Schottky barrier
mA 103 SD103
Typical high current forward conduction curve
tp=300 s, duty cycle=2% A 5 SD103
IF
10 2
IF
4
10
3
1
2
10 -1
1
10 -2 0 0.5 VF 1V
0 0 0.5 1 VF 1.5V
Typical non repetitive forward surge current versus pulse width
Rectangular pulse A 50 SD103
Typical variation of reverse current at various temperatures
A 103 SD103 Tamb=125o C 100 oC 10 2 75 oC 10 50 oC
IF
40
IR
30
20 1 10 10 -1 10 -3 10 -2 10 -1 1 10 tp 10 2 103 ms 0 10 20 30 VR 40 50V 25 oC
0
Blocking voltage deration versus temperature at various average forward currents
V 50 SD103
Typical capacitance versus reverse voltage
pF 100
7 5 4 3 2
SD103
VR 40 100 mA 30 200 mA 20 I F =400 mA
Ctot
10
7 5 4 3 2
10
0 0 100 Tamb
200 C
o
1 0 10 20 30 VR 40 50V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
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