STLL60P

ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings (Ta = 25oC) Symbol Reverse Voltage dc Peak Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range VR VRM IO IFM Isurge Tj TS Value 20 45 50 150 500 75 -55 to +175 Unit V V mA mA mA O O C C Characteristics at Ta = 25oC Symbol Forward Current at VF = 1V Reverse Currents at VR = 10V Junction Capacitance C at f = 1MHz, V = 1V Rectification Efficiency at Vi = 2Vrms, = 5KΩ IF IR η Min. 4 55 Typ. Max. 50 1 Unit mA μA pF % 5KΩ Input 2Vrms Rectification Efficiency Measurement Circuit 20PF ® Output SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/02/2003