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1N5415

1N5415

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    1N5415 - HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5415 数据手册
SENSITRON ___ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D 1N5415,US 1N5416,US 1N5417,US 1N5418,US 1N5419,US 1N5420,US JAN JANTX JANTXV SJ SX SV HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to JANS per MIL-PRF-19500/411 using Sensitron specification, 7700-409X • Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5 DESCRIPTION: 400 VOLT, 3.0 AMP, 150 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING Peak Inverse Voltage (PIV) 1N5415,US 1N5416,US 1N5417,US 1N5418,US 1N5419,US 1N5420,US Average DC Output Current (Io) Peak Single Cycle Surge Current (Ifsm) CONDITIONS All ratings are at TA = 25oC unless otherwise specified. MIN TYP MAX 50 100 200 400 500 600 3.0 80 UNIT Vdc TA = +55 oC tp = 8.3 ms Single Half Cycle Sine Wave, Superimposed On Rated Load If = 9.0A (300 μsec pulse, duty cycle < 2%) - - Amps Amps(pk) Operating and Storage Temp. (Top & Tstg) Maximum Forward Voltage (Vf) 1N5415/US, 1N5416,US 1N5417,US, 1N5418,US 1N5419/US, 1N5420,US Maximum Instantaneous Reverse Current At Rated (PIV) Reverse Recovery Time (trr) 1N5415/US, 1N5416,US 1N5417,US, 1N5418,US 1N5419/US, 1N5420,US Thermal Resistance (θJL) Thermal Resistance (θJC) -65 - - +175 °C Volts 1.6 1.7 1.8 1.0 20 150 150 250 400 22 6.5 ° C/W ° C/W nsec μAmps TA = 25° C TA = 100° C If = 0.5A, Ir = 1.0A, Irr = 0.25A d = 0.375” L=0 for US versions ©2001 Sensitron Semiconductor • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX 631 242 9798 • sensitron.com • sales@sensitron.com SENSITRON ___ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D MECHANICAL DIMENSIONS In Inches / (mm), min./max. 0.042 (1.07 0.037 0.94) 1N5415,US 1N5416,US 1N5417,US 1N5418,US 1N5419,US 1N5420,US .028 (.72 .019 .48) 0.020 R Max (5.08) .003 Min (.076) .128 (3.8 .091 3.4) .180 (4.57 .115 2.92) .260 (6.60 .130 3.30) 1.30 (33.0 0.90 22.9) .225 (5.8 .200 5.0) .148 (3.8 .137 3.4 ) PKG. 301 MELF-B Note: The cathode side is marked with a dark colored band on one side of the diode body. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2001 Sensitron Semiconductor • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX 631 242 9798 • sensitron.com • sales@sensitron.com
1N5415
物料型号: - 1N5415, US - 1N5416, US - 1N5417, US - 1N5418, US - 1N5419, US - 1N5420, US

器件简介: - 400V,3.0A,150纳秒整流器,最大额定值。 - 采用密封非腔体玻璃封装,冶金键合制造和筛选,符合MIL-PRF-19500/411标准,根据Sensitron规范7700-409X。

引脚分配: - 轴向引线类似于DO-35,表面贴装类似于D-5。 - 阴极侧在二极管体的一侧标有深色带。

参数特性: - 峰值反向电压(PIV):1N5415为50Vdc,1N5416为100Vdc,1N5417为200Vdc,1N5418为400Vdc,1N5419为500Vdc,1N5420为600Vdc。 - 平均直流输出电流(I):在+55°C时为3.0A。 - 峰值单周期浪涌电流(Ism):在8.3ms单半周期正弦波,叠加在额定负载上时为80A(峰值)。 - 工作和存储温度(Top & Tstg):-65°C至+175°C。 - 最大正向电压(V):1N5415/US和1N5416/US为1.6V,1N5417/US和1N5418/US为1.7V,1N5419/US和1N5420/US为1.8V。 - 额定PIV下的最大瞬时反向电流:在25°C时为1.0A,在100°C时为20A。 - 反向恢复时间(trr):1N5415/US和1N5416/US为150ns,1N5417/US和1N5418/US为250ns,1N5419/US和1N5420/US为400ns。 - 热阻(θJL):0.375英寸时为22°C/W。 - 热阻(θJc):对于US版本,L=0时为6.5°C/W。

功能详解: - 该系列整流器适用于高电流应用,具有快速反向恢复时间和低正向电压降,适合需要高效率和高功率密度的场合。

应用信息: - 适用于需要高可靠性的场合,如核能控制、航空航天、交通设备、医疗设备和安全设备等。

封装信息: - 提供轴向引线和表面贴装两种封装方式,具体尺寸和封装细节在PDF中的机械尺寸图示中有详细说明。
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