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MURC1540

MURC1540

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    MURC1540 - MURC1510-MURC1560 Ultrafast Silicon Die - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
MURC1540 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4861, Rev.- MURC1510-MURC1560 MURC1510-MURC1560 Ultrafast Silicon Die Applications: • Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • Glass-Passivated Epitaxial Construction. Low Reverse Leakage Current High Surge Current Capability Low Forward Voltage Drop Fast Reverse-Recovery Behavior Symbol VRWM IF(AV) IFRM IFSM MURC 1510 100 MURC 1515 150 MURC 1520 200 MURC 1540 400 MURC 1560 600 15 @ TC = 145°C 30 @ TC = 145°C 150 Unit V A A A Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Forward Current(Rated VR) Peak Rectified Forward Current(Rated VR, Square Wave, 20 kHz) Max. Peak One Cycle Non-Repetitive Surge Current 8.3 ms, half Sine pulse Operating JunctionTemperature and Storage Temperature 15 @ TC = 150°C 30 @ TC = 150°C 200 TJ, Tstg -65 to +175 °C Electrical Characteristics: Characteristics Symbol MURC 1510 MURC 1515 MURC 1520 MURC 1540 MURC 1560 Unit Max. Instantaneous Forward Voltage (Note1) (IF = 15 Amp, TJ = 150 °C) (IF = 15 Amp, TJ = 25 °C) Max. Instantaneous Reverse Current (Note1) (Rated DC Voltage, TC = 150 °C) (Rated DC Voltage, TC = 25 °C) Max. Junction Capacitance @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 A/µs) (IF = 0.5 Amp, IR = 1.0 A, IREC=0.25A) 1. VF 0.85 1.05 IR 500 10 CT trr 240 500 10 1000 10 1.12 1.25 1.20 1.50 V µA pF nS 35 25 60 50 Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2% • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4861, Rev.- MURC1510-MURC1560 Dimensions in inches (mm) ANODE BA Top side metalization: Al - 25 kÅ minimum or Ti/Ni/Ag - 30 kÅ minimum Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Anode C Cathode Die type Area (mil2) Si p-n die 120 x 120 Tolerance is ± 0.003” (0.076 mm) (2) Tolerance is ± 0.001” (0.025 mm) (1) Dimension A (1) Inch (millimeter) 0.120 (3.048) Dimension B (1) Inch (millimeter) 0.094 (2.388) Dimension C (2) Inch (millimeter) 0.010 (0.254) DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4861, Rev.MURC1510, MURC1515, MURC1520 MURC1510-MURC1560 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4861, Rev.MURC1540 MURC1510-MURC1560 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4861, Rev.MURC1560 MURC1510-MURC1560 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4861, Rev.- MURC1510-MURC1560 MURC1510, MURC1515, MURC1520, MURC1540, MURC1560 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MURC1540
物料型号: - MURC1510 - MURC1515 - MURC1520 - MURC1540 - MURC1560

器件简介: 这些器件是超快速硅二极管,应用于开关电源、通用、自由轮二极管和极性保护二极管。

引脚分配: - 底面金属化:Ti/Ni/Ag - 30 kÅ minimum,底面是阴极,顶面是阳极。

参数特性: - 峰值反向电压(VRWM):100V至600V不等。 - 平均整流前向电流(IF(AV)):部分型号在150°C时为15A。 - 峰值整流前向电流(FRM):部分型号在150°C时为30A。 - 最大单周期非重复浪涌电流(IFSM):部分型号为150A或200A。 - 工作结温和储存温度(TJ,Tsg):-65至+175°C。

功能详解: - 玻璃钝化 - 外延结构 - 低反向漏电流 - 高浪涌电流能力 - 低正向电压降 - 快速反向恢复行为

应用信息: 适用于开关电源、通用用途、自由轮二极管和极性保护二极管。

封装信息: - 顶面金属化:Al - 25 kÅ minimum或Ti/Ni/Ag - 30 kÅ minimum。 - 底面金属化:Ti/Ni/Ag - 30 kÅ minimum。
MURC1540 价格&库存

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