MURC620

SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4857, Rev.- MURC620 MURC620 Ultrafast Silicon Die Applications: • Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • Glass-Passivated Epitaxial Construction. Low Reverse Leakage Current High Surge Current Capability Low Forward Voltage Drop Fast Reverse-Recovery Behavior Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current Max. Junction Capacitance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =100°C, rectangular wave form 8.3 ms, half Sine pulse Max. 200 6.0 60 Units V A A CJ TJ Tstg @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) - 75 -65 to +150 -65 to +150 pF °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop * Symbol VF1 VF2 Max. Reverse Current * IR1 IR2 Max Reverse Recovery Time Max Reverse Recovery Time * Pulse Width < 300µs, Duty Cycle