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MURC805

MURC805

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    MURC805 - MURC805-MURC860 Ultrafast Silicon Die - Sensitron

  • 数据手册
  • 价格&库存
MURC805 数据手册
SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.Technical Data MURC805-MURC860 MURC805-MURC860 Ultrafast Silicon Die Applications: • Switching Power Supply • General Purpose • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • Glass-Passivated Epitaxial Construction. Low Reverse Leakage Current High Surge Current Capability Low Forward Voltage Drop Fast Reverse-Recovery Behavior Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Forward Current Total Device,(Rated VR), TC = 150°C Peak Repetitive Forward Current (Rated VR, Squre Wave,20KHz), TC = 150°C Max. Peak One Cycle NonRepetitive Surge Current 8.3 ms, half Sine pulse Operating JunctionTemperature and Storage Temperature Symbol VRWM IF(AV) IFM IFSM TJ, Tstg MURC 805 50 MURC 810 100 MURC 815 150 MURC 820 200 MURC 840 400 MURC 860 600 Unit V A A A °C 8.0 16 100 -65 to +175 Electrical Characteristics: Characteristics Max. Forward Voltage Drop(Note1) (IF = 8.0 Amp, TJ = 150 °C) (IF = 8.0 Amp, TJ = 25 °C) Max. Reverse Current (Note1) (Rated DC Voltage, TJ = 150 °C) (Rated DC Voltage, TJ = 25 °C) Max. Junction Capacitance @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 A/µs) (IF = 0.5 Amp, IR = 1.0 A, IREC=0.25A) Symbol VF IR CT trr MURC 805 MURC 810 MURC 815 MURC 820 MURC 840 1.00 1.30 500 10 240 MURC 860 1.20 1.50 µA pF nS Unit V 0.895 0.975 250 5.0 35 25 60 50 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2% • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.- MURC805-MURC860 Dimensions in inches (mm) ANODE BA Top side metalization: Al - 25 kÅ minimum or Ti/Ni/Ag - 30 kÅ minimum Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Anode C Cathode Die type Si p-n die (1) (2) Area (mil2) 85 x 85 Dimension A (1) Inch (millimeter) 0.085 (2.159) Dimension B (1) Inch (millimeter) 0.069 (1.753) Dimension C (2) Inch (millimeter) 0.009 (0.229) Tolerance is ± 0.003” (0.076 mm) Tolerance is ± 0.001” (0.025 mm) DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.- MURC805-MURC860 MURC805, MURC810, MURC815, MURC820 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.MURC840 MURC805-MURC860 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.MURC860 MURC805-MURC860 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4858, Rev.- MURC805-MURC860 MURC805, MURC810, MURC815,MURC820, MURC840, MURC860 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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