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SD060SA60A

SD060SA60A

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD060SA60A - SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 C TJ Operation) - Sen...

  • 详情介绍
  • 数据手册
  • 价格&库存
SD060SA60A 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4947, Rev.- SD060SA60A/B SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation) Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1) : Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (1) TJ = 25 °C, IAS = 1.3 A, L = 10 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5V R M ax. 60 3 55 8.6 1.3 -65 to +150 -65 to +150 Units V A A mJ A °C °C Electrical Characteristics(1) : Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 3A, Pulse, TJ = 25 °C @ 3A, Pulse, TJ = 125 °C @V R = 60V, Pulse, TJ = 25 °C @V R = 60V, Pulse, TJ = 125 °C @V R = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) M ax. 0.56 0.51 400 28 160 Units V V µA mA pF (1) in SHD package • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR SD060SA60A/B Data Sheet 4947, Rev.Mechanical Dimensions: In Inches / mm Bottom side metalization Ag - 30 kÅ minimum. 0.054 ± 0.003 (1.37 ± 0.077) 0.060 ± 0.003 (1.52 ± 0.077) Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top; Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top. H Typical Forward Characteristics 10 1 Typical Reverse Characteristics 101 Instantaneous Reverse Current - R (mA) I 175 °C 150 °C 175 °C 100 125 °C 10-1 100 °C 75 °C Instantaneous Forward Current - IF (A) 10-2 50 °C 10 -3 25 °C 10-4 0 10 20 30 Reverse Voltage - V (V) R 40 50 125 °C 100 25 °C Junction Capacitance - C (pF) T 150 125 100 75 50 0 Typical Junction Capacitance 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 0.8 10 20 30 Reverse Voltage - V (V) R 40 50 • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD060SA60A
1. 物料型号: - 型号:SD060SA60A/B

2. 器件简介: - 该器件为硅肖特基整流二极管,具有非常低的正向电压降(在150°C TJ操作下),适用于开关电源、转换器、自由轮二极管、极性保护二极管等应用。

3. 引脚分配: - 底面为阴极,顶面为阳极。

4. 参数特性: - 最大额定值: - 峰值反向电压(VRWM):60V - 最大平均正向电流(IF(AV)):3A(50%占空比,矩形波形) - 最大单周期非重复浪涌电流(IFSM):55A(8.3ms,半正弦波) - 非重复浪涌能量(EAS):8.6mJ(T = 25°C,IAS = 1.3A,L = 10mH) - 重复浪涌电流(IAR):1.3A(IAS衰减线性至0在1us内,由T限制,最大VA=1.5VR) - 最大结温(T):-65至+150°C - 最大存储温度(Tsto):-65至+150°C

5. 功能详解: - 特点包括软反向恢复(在低温和高温下)、非常低的正向电压降、低功耗高效率、高浪涌能力、增强耐用性和长期可靠性的防护环、保证的反向雪崩特性、在包装过程中和包装后的电气/机械稳定性。

6. 应用信息: - 适用于开关电源、转换器、自由轮二极管、极性保护二极管等。

7. 封装信息: - 封装类型为SHD,具体尺寸和金属化信息如下: - 底面金属化Ag - 最小30 kÅ。 - 顶面金属化Al - 最小25 kÅ或Ag - 最小30 kÅ。 - 尺寸H = 0.0105 ± 0.001(0.27 ± 0.026)对于Al顶面; - 尺寸H = 0.0155 ± 0.001(0.39 ± 0.026)对于Ag顶面。
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