SD090SB100B

SD090SB100B

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD090SB100B - SILICON SCHOTTKY RECTIFIER DIE Low Forward Voltage Drop (175℃ TJ Operation) - Sensitro...

  • 详情介绍
  • 数据手册
  • 价格&库存
SD090SB100B 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4962, Rev.- SD090SB100A/B/C SILICON SCHOTTKY RECTIFIER DIE Low Forward Voltage Drop (175 •C TJ Operation) Applications: Features: œ œ œ œ œ œ œ œ œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form (1) 8.3 ms, half Sine wave TJ = 25 •C, IAS = 2.0 A, L = 6.5 mH IAS decay linearly to 0 in 1 ms ‹ limited by TJ max VA=1.5VR - Max. 100 7.5 140 13.0 2.0 -65 to +175 -65 to +175 Units V A A mJ A •C •C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (1) in SHD package CT Condition @ 7.5A, Pulse, TJ = 25 •C @ 7.5A, Pulse, TJ = 125 •C @VR = 100V, Pulse, TJ = 25 •C @VR = 100V, Pulse, TJ = 125 •C @VR = 5V, TC = 25 •C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.84 0.68 0.18 4.0 250 Units V V mA mA pF œ 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 œ œ W orld Wide Web Site - http://www.sensitron.com œ E-Mail Address - sales@sensitron.com œ SENSITRON SEMICONDUCTOR Data Sheet 3248, Rev.Mechanical Dimensions: In Inches / mm SD090SB100A/B/C Bottom side metalization Ag - 30 kÅ minimum. 0.081 0.003 0.090 0.003 (2.06 0.077) (2.29 0.077) ¡ ¡ ¡ ¡ Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode.     Dimension H = 0.0105 ± 0.001 (0.27 Dimension H = 0.0155 ± 0.001 (0.39 0.026) for Al top; 0.026) for Ag top. H œ 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 œ œ W orld Wide Web Site - http://www.sensitron.com œ E-Mail Address - sales@sensitron.com œ SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD090SB100B
1. 物料型号: - 型号:SD090SB100A/B/C

2. 器件简介: - 该器件是一个硅肖特基整流器二极管,具有低正向电压降,并在175°C的工作温度下操作。

3. 引脚分配: - 底部金属化层为阴极,顶部金属化层为阳极。底部金属化层为银(Ag),最小厚度30kÅ;顶部金属化层为铝(Al)或银(Ag),铝的最小厚度为25kÅ,银的最小厚度为30kÅ。

4. 参数特性: - 最大反向峰值电压(VRWM):100V - 最大平均正向电流(IF(AV)):7.5A(50%占空比,矩形波形) - 最大单周期非重复浪涌电流(IFSM):140A(8.3ms,半正弦波) - 非重复浪涌能量(EAS):13.0mJ(T = 25°C,IAS = 2.0A,L = 6.5mH) - 重复浪涌电流(IAR):2.0A(IAS在线性1us内衰减至0,受限于最大VA=1.5VR) - 最大结温(TJ):-65至+175°C - 最大存储温度(Tstg):-65至+175°C

5. 功能详解: - 软反向恢复特性,适用于低温和高温环境。 - 低正向电压降。 - 低反向漏电流。 - 低功耗、高效率。 - 高浪涌能力。 - 增强耐久性和长期可靠性的防护环。 - 保证的反向雪崩特性。 - 封装过程中和之后电学/机械稳定性。

6. 应用信息: - 开关电源转换器、自由轮流通二极管、极性保护二极管。

7. 封装信息: - 封装尺寸以英寸/毫米为单位,具体尺寸图示请参考文档中的图示链接。
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