SENSITRON SEMICONDUCTOR
Data Sheet 3331, Rev. Features
SD103AWS-G - SD103CWS-G
SCHOTTKY BARRIER SWITCHING DIODE
Green Products
Green Products in Compliance with the RoHS Directive Low Forward Voltage Drop Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time D E · Low Reverse Capacitance · Ultra-Small Surface Mount Package
· ·
SOD-323 Dim A B C D E Min 2.30 1.75 1.15 0.25 0.05 0.70 0.30 Max Min Max 2.70 0.091 0.106 1.95 0.069 0.077 1.35 0.045 0.053 0.35 0.010 0.014 0.15 0.002 0.006 0.95 0.028 0.037 — 0.012 — In inch
Mechanical Data
Case: SOD-323, Plastic Polarity: Cathode Band Leads: Solderable per MIL-STD-202, Method 208 · SD103AWS-G Marking: S4 · SD103BWS-G Marking: S5 or S4 · SD103CWS-G Marking:S6 or S5 S4 or · Weight: 0.004 grams (approx.) · · ·
G H
AB
C J
G H
In mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol SD103AWS-G SD103BWS-G SD103CWS-G Unit
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM VR VR(RMS) IFM @ t £ 1.0s IFSM Pd RqJA Tj, TSTG
40 28
30 21 350 1.5 200 625 -65 to +125
20 14
V V mA A mW °C/W °C
RMS Reverse Voltage Forward Continuous Current (Note 1) Non-Repetitive Peak Forward Surge Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic Reverse Breakdown Voltage (Note 2)
@ TA = 25°C unless otherwise specified Symbol SD103AWS-G SD103BWS-G SD103CWS-G V(BR)R VFM SD103AWS-G SD103BWS-G SD103CWS-G IRM Cj trr Min 40 30 20 ¾ ¾ ¾ ¾ Typ ¾ ¾ ¾ 50 10 Max ¾ 0.37 0.60 5.0 ¾ ¾ Unit V V mA pF ns Test Condition IR = 10mA IR = 10mA IR = 10mA IF = 20mA IF = 200mA VR = 30V VR = 20V VR = 10V VR = 0V, f = 1.0MHz IF = IR = 200mA, Irr = 0.1 x IR, RL = 100W
Forward Voltage Drop Peak Reverse Current
Junction Capacitance Reverse Recovery Time Notes:
1. Valid provided that leads are kept at ambient temperature. 2. Test period
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