SD125SCU100B

SD125SCU100B

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD125SCU100B - SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200°C Operating Temperature ...

  • 详情介绍
  • 数据手册
  • 价格&库存
SD125SCU100B 数据手册
SD125SCU100A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 528, REV. B SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • • • Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Out Performs 100 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (1) TJ = 25 °C, IAS = 0.53 A, L = 56 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Max. 100 15 280 8.0 0.53 -65 to +200 -65 to +200 Units V A A mJ A °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = 100V, Pulse, TJ = 25 °C @VR = 100V, Pulse, TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.84 0.68 10 1.0 500 Units V V µA mA pF (1) in SHD package • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD125SCU100A/B/C SENSITRON TECHNICAL DATA DATA SHEET 528, REV. B Typical Forward Characteristics 101 Instantaneous Reverse Current - I R (mA) Typical Reverse Characteristics 200 °C 175 °C 10 0 150 °C 125 °C 100 °C 10 1 200 °C 175 °C 10-1 Instantaneous Forward Current - I F (A) 10-2 75 °C 50 °C 100 10-3 10-4 25 °C 125 °C 0 20 40 60 80 100 Reverse Voltage - VR (V) 120 Typical Junction Capacitance 10-1 Junction Capacitance - CT (pF) 0.8 25 °C 400 300 200 100 0 20 40 60 80 Reverse Voltage - VR (V) 100 120 10-2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD125SCU100A/B/C SENSITRON TECHNICAL DATA DATA SHEET 528, REV. B Mechanical Dimensions: In Inches / mm H D h BA Figure 1 Figure 2 A 0.125±0.003 B 0.116±0.003 D 0.070±0.005 Top side(Anode) metallization: A = Al - 25 kÅ minimum, Figure 1 B = Ag - 30 kÅ minimum, Figure 1 C = Au - 12 kÅ min, Figure H 0.0155±0.001 h 0.010±0.002 Bottom side (Cathode) metallization: A, B, C = Ti/Ni/Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD125SCU100B
物料型号: - 型号:SD125SCU100A/B/C

器件简介: - 该器件是一款硅肖特基整流器,具有超低反向漏电流,能在200°C的工作温度下运行。

引脚分配: - 底面(阴极):A、B、C = Ti/Ni/Ag - 30 kÅ 最小值。 - 顶面(阳极):A=Al-25 kΩ 最小值,B=Ag-30 kΩ 最小值,C=Au-12 kΩ 最小值。

参数特性: - 最大额定值: - 反向峰值电压(VRWM):100V - 最大平均正向电流(IF(AV)):15A(50%占空比,矩形波形) - 最大单周期非重复浪涌电流(IFSM):280A(8.3ms,半正弦波) - 非重复雪崩能量(EAS):8.0mJ(T = 25°C,IAS = 0.53A,L = 56mH) - 重复雪崩电流(IAR):0.53A(IAS在1us内线性衰减至0,由T限制,最大VA=1.5VR) - 最大结温(T):-65至+200°C - 最大存储温度(Tstg):-65至+200°C

- 电气特性: - 最大正向电压降(VF1):0.84V(15A,脉冲,T=25°C) - 最大反向电流(IR1):10μA(VR=100V,脉冲,T=25°C)

功能详解: - 超低反向漏电流 - 低温度和高温度下的软反向恢复 - 非常低的正向电压降 - 低功耗,高效率 - 高浪涌能力 - 增强耐用性和长期可靠性的防护环 - 保证的反向雪崩特性 - 封装过程中和之后电学/机械稳定性 - 性能超过100V超快整流器

应用信息: - 开关电源 - 转换器 - 自由轮流通二极管 - 极性保护二极管

封装信息: - 机械尺寸:英寸/毫米 - 提供了两个图表(Figure 1 和 Figure 2)来展示封装的详细尺寸。
SD125SCU100B 价格&库存

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