SD175SA60C

SD175SA60C

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD175SA60C - SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation) - Se...

  • 详情介绍
  • 数据手册
  • 价格&库存
SD175SA60C 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 257, Rev.- SD175SA60A/B/C SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation) Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (1) TJ = 25 °C, IAS = 1.1 A, L = 60 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Max. 60 30 570 36 6.0 -65 to +150 -65 to +150 Units V A A mJ A °C °C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 30A, Pulse, TJ = 25 °C @ 30A, Pulse, TJ = 125 °C @VR = 60V, Pulse, TJ = 25 °C @VR = 60V, Pulse, TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.56 0.51 400 280 1600 Units V V µA mA pF (1) in SHD package • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 257, Rev.Mechanical Dimensions: In Inches / mm SD175SA60A/B/C Bottom side metalization Ag - 30 kÅ minimum. 0.163 ± 0.003 0.175 ± 0.003 (4.14 ± 0.077) (4.45 ± 0.077) Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top; Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top. H Typical Forward Characteristics 102 103 Typical Reverse Characteristics 175 °C Instantaneous Reverse Current - IR (mA) 102 150 °C 125 °C 175 °C 101 100 °C 100 Instantaneous Forward Current - IF (A) 75 °C 50 °C 10-1 10-2 25 °C 125 °C 10 1 10-3 0 10 20 30 Reverse Voltage - VR (V) 40 50 25 °C Junction Capacitance - CT (pF) 1600 1400 1200 1000 800 600 400 200 0 Typical Junction Capacitance 25 °C 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 0.8 10 20 30 Reverse Voltage - VR (V) 40 50 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD175SA60C
物料型号: - 型号为SENSITRON SD175SA60A/B/C。

器件简介: - 该器件是一个硅肖特基整流二极管,具有非常低的正向电压降,并能在150°C的结温下工作。适用于开关电源、转换器、自由轮二极管和极性保护二极管。

引脚分配: - 底部为阴极,顶部为阳极。

参数特性: - 最大额定值包括:峰值反向电压(VRWM)为60V,最大平均正向电流(IF(AV))为30A(50%占空比,矩形波形),最大单周期非重复浪涌电流(IFSM)为570A(8.3ms,半正弦波),非重复浪涌能量(EAS)为36mJ(25°C时,IAS=1.1A,L=60mH),重复浪涌电流(AR)为6.0A,最大结温(TJ)为-65至+150°C,最大储存温度(Tstg)为-65至+150°C。 - 电气特性包括:最大正向电压降(VF1)在30A、25°C时为0.56V,VF2在30A、125°C时为0.51V,最大反向电流(IR1)在60V、25°C时为400μA,IR2在60V、125°C时为280mA,最大结电容(CT)在5V、25°C、1MHz、50mV(p-p)时为1600pF。

功能详解: - 该器件具有软反向恢复特性,在低温和高温下均表现良好。它还具有非常低的正向电压降、低功耗、高效率、高浪涌能力、增强耐用性和长期可靠性的防护环以及保证的反向雪崩特性。在包装过程中和包装后电学和机械稳定。

应用信息: - 适用于开关电源、转换器、自由轮二极管和极性保护二极管。

封装信息: - 封装细节包括底部金属化层至少30kÅ的银,顶部金属化层至少25kÅ的铝或至少30kÅ的银。详细尺寸和机械尺寸图可以参考提供的图片链接。
SD175SA60C 价格&库存

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