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SD175SE45C

SD175SE45C

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD175SE45C - SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SD175SE45C 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4950, Rev.- SD175SE45A/B/C SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Soft Reverse Recovery at Low and High Temperature Extremely Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1) : Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 msec, sine pulse TJ = 25 °C, IAS = 6.0 A, L = 2.2 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5V R M ax. 45 30 570 40 6.0 -55 to + 125 -55 to + 125 Units V A A mJ A °C °C Electrical Characteristics(1) : Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 30 A, Pulse, TJ = 25 °C @ 30 A, Pulse, TJ = 125 °C @V R = 45V, Pulse, TJ = 25 °C @V R = 45V, Pulse, TJ = 125 °C @V R = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) M ax. 0.51 0.47 3.5 500 1700 Units V V mA mA pF (1) in SHD package • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4950, Rev.Mechanical Dimensions: In Inches / mm SD175SE45A/B/C Bottom side metalization Ag - 30 kÅ minimum. 0.163 ± 0.003 0.175 ± 0.003 (4.14 ± 0.077) (4.45 ± 0.077) Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top; Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top. H Typical Forward Characteristics 103 Instantaneous Reverse Current - R (mA) I Typical Reverse Characteristics 102 102 125 °C 100 °C 101 75 °C 100 Instantaneous Forward Current - F (A) I 125 °C 50 °C 10-1 25 °C 100 °C 101 10-2 0 10 25 °C Junction Capacitance - CT (pF) 20 30 40 Reverse Voltage - V ( V) R 50 Typical Junction Capacitance 1600 1400 1200 1000 800 600 400 200 0 10 20 30 40 Reverse Voltage - V ( V) R 50 100 0.0 0.2 0.4 0.6 Forward Voltage Drop - V ( V) F 0.8 • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD175SE45C
1. 物料型号: - 型号为SD175SE45A/B/C,由SENSITRON SEMICONDUCTOR生产。

2. 器件简介: - 该器件是一款硅肖特基整流二极管,具有极低的正向电压降,适用于开关电源、转换器、自由轮流通二极管和极性保护二极管。

3. 引脚分配: - 底部为阴极,顶部为阳极。

4. 参数特性: - 最大反向峰值电压(VRWM):45V - 最大平均正向电流(IF(AV)):30A(50%占空比,矩形波形) - 最大单周期非重复浪涌电流(IFSM):570A(8.3毫秒,正弦脉冲) - 非重复雪崩能量(EAS):40mJ(T = 25°C,IAS = 6.0A,L = 2.2mH) - 重复雪崩电流(AR):6.0A(IAS衰减线性至0在1us内,由T,max VA=1.5VB限制) - 最大结温(TJ):-55至+125°C - 最大存储温度(Tsto):-55至+125°C

5. 功能详解: - 软反向恢复特性,适用于低温和高温环境。 - 极低的正向电压降,低功耗,高效率。 - 高浪涌能力。 - 增强的耐用性和长期可靠性的防护环。 - 保证的反向雪崩特性。 - 封装过程中和之后的电气/机械稳定性。

6. 应用信息: - 适用于需要高可靠性的应用,如核能控制、航空航天、交通设备、医疗设备和安全设备等。

7. 封装信息: - 底部金属化银 - 最小30kÅ。 - 顶部金属化铝 - 最小25kÅ或银-30kÅ。 - 尺寸H = 0.0105 ± 0.001(0.27 ± 0.026)对于铝顶部;H = 0.0155 ± 0.001(0.39 ± 0.026)对于银顶部。
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