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SD200SD15B

SD200SD15B

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SD200SD15B - SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SD200SD15B 数据手册
SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4940, Rev. A SD200SD15A/B/C SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave TJ = 25 °C, IAS = 12 A, L = 0.75 mH IAS decay linearly to 0 in 1 μs ƒ limited by TJ max VA=1.5VR Max. 15 60 860 54 12 -65 to +100 -65 to +100 Units V A A mJ A °C °C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 60A, Pulse, TJ = 25 °C @ 60A, Pulse, TJ = 100 °C @VR = 15V, Pulse, TJ = 25 °C @VR = 15V, Pulse, TJ = 100 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.41 0.37 20 1000 3600 Units V V mA mA pF (1) in SHD package Technical Data • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4940, Rev. A Mechanical Dimensions: In Inches / mm SD200SD15A/B/C Bottom side metalization Ag - 30 kÅ minimum. 0.191 ± 0.003 (4.85 ± 0.077) 0.200 ± 0.003 (5.08 ± 0.077) Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top; Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top. H Typical Forward Characteristics Typical Reverse Characteristics (mA) 100¡æ 102 100¡æ 101 F Instantaneous Reverse Current - I R 75¡æ (A) Instantaneous Forward Current - I 101 50¡æ 25¡æ 100 0 2 4 6 8 10 12 Reverse Voltage - V R (V) 14 16 75¡æ 10 0 25¡æ Junction Capacitance - C T (pF) 3500 Typical Junction Capacitance 25¡æ 3000 10-1 2500 2000 0 2 4 6 8 10 12 14 16 Reverse Voltage - V R (V) 18 20 0.0 0.1 0.2 0.3 Forward Voltage Drop - V F (V) 0.4 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR Data Sheet 4940, Rev. A SD200SD15A/B/C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SD200SD15B
物料型号: - SD200SD15A/B/C

器件简介: - 该器件为硅肖特基整流器,具有极低的正向电压降。

引脚分配: - 底侧为阴极,顶侧为阳极。

参数特性: - 最大额定值:峰值反向电压VRWM为15V,最大平均正向电流IF(AV)为60A,最大峰值单周期非重复浪涌电流IFSM为860A,非重复雪崩能量EAS在TJ = 25°C时为54mJ,最大结温TJ为-65到+100°C。 - 电气特性:正向电压降VF在60A脉冲条件下,TJ = 25°C时为0.41V,在TJ = 100°C时为0.37V。反向电流IR在VR = 15V脉冲条件下,TJ = 25°C时为20mA,在TJ = 100°C时为1000mA。最大结电容CT在VR = 5V,TC = 25°C时,fSIG = 1MHz,VSIG = 50mV (p-p)时为3600pF。

功能详解: - 该器件具有软反向恢复特性,极低的正向电压降,低功耗高效率,高浪涌能力,增强的耐用性和长期可靠性,保证的反向雪崩特性,以及在包装过程中和包装后的电气/机械稳定性。

应用信息: - 适用于开关电源、转换器、自由轮二极管、极性保护二极管。

封装信息: - 文档中提供了机械尺寸图,底侧金属化Ag至少30kÅ,顶侧金属化Al至少25kÅ或Ag至少30kÅ。高度H对于Al顶侧为0.0105±0.001英寸(0.27±0.026mm),对于Ag顶侧为0.0155±0.001英寸(0.39±0.026mm)。
SD200SD15B 价格&库存

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