SD275SE30B

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SD275SE30A/B/C SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Ultra Low Forward Voltage Drop Soft Reverse Recovery at Low and High Temperature Low Power Loss, High Efficiency Very High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 msec, sine pulse TJ = 25 °C, IAS = 3.7 A L = 6.5 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Max. 20 120 1650 44.5 3.7 -55 to + 150 -55 to + 150 Units V A A mJ A °C °C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 VF3 IR1 IR2 IR3 Max. Junction Capacitance (1) in SHD package CT Condition @ 120A, Pulse, TJ = 25 °C @ 120A, Pulse, TJ = 125 °C @ 120A, Pulse, TJ = 150 °C @VR = 30V, Pulse, TJ = 25 °C @VR = 30V, Pulse, TJ = 125 °C @VR = 5V, Pulse, TJ = 100 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, ISIG = 50mV (p-p) Typ. 0.42 0.30 0.27 2.7 2240 100 6684 Max. 0.48 0.35 0.32 20.0 3000 180 8100 Units V V V mA mA mA pF Max. Reverse Current • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD275SE30A/B/C SENSITRON TECHNICAL DATA DATA SHEET 4142, Rev A Typical Forward Characteristics 10 4 (mA) Typical Reverse Characteristics R 150 °C 10 3 Instantaneous Reverse Current - I 150 °C 102 (A) 125 °C 100 °C 75 °C 10 2 125 °C F Instantaneous Forward Current - I 10 1 50 °C 25 °C 10 0 100 °C 10 -1 101 25 °C 0 5 10 15 20 Reverse Voltage - VR (V) 25 30 Typical Junction Capacitance Junction Capacitance - C T (pF) 9000 8000 7000 6000 5000 4000 3000 0 5 10 15 20 25 Reverse Voltage - VR (V) 30 35 25 °C 100 0.0 0.2 0.4 Forward Voltage Drop - V F (V) 0.6 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD275SE30A/B/C SENSITRON TECHNICAL DATA DATA SHEET 4142, Rev A Mechanical Dimensions: In Inches / mm H D h Schottky Chip BA Moly Attached Schottky Die Figure 1 Figure 2 Top side(Anode) metallization: A = Al - 25 kÅ minimum, Figure 1 B = Ag - 30 kÅ minimum, Figure 1 C = Au - 12 kÅ min, Figure 2 Bottom side (Cathode) metallization: A, B, C = Ti/Ni/Ag - 30 kÅ minimum. A 0.275±0.003 B 0.267±0.003 D 0.220±0.005 H 0.0155±0.001 h 0.011±0.002 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •