SHB601052E_08

厂商：
SENSITRON
封装：
描述：
SHB601052E_08 - Silicon Carbide Single Phase Full Wave Bridge - Sensitron

数据手册：

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SHB601052E_08 数据手册

SENSITRON_________ SEMICONDUCTOR Technical Data Datasheet 4308 REV. C SHB601052E Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES • NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC) WHEN USED AS A BRIDGE MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) per leg, TC = 25 OC MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT (t = 10µs, pulse) per leg, TC = 25 OC MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg MAXIMUM POWER DISSIPATION, TC = 25 OC MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a BRIDGE) MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. SYMBOL PIV IO IFRM IFSM CJ Pd RθJC Top, Tstg MAX. 1200 10 30 100 450 30 1.0 -55 to +175 UNITS Volts Amps Amps Amps pF W °C/W °C ELECTRICAL CHARACTERISTICS CHARACTERISTIC MAXIMUM FORWARD VOLTAGE DROP (If = 5 A PER LEG) Vf TJ=25 °C TJ=150 °C MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 °C TJ = 150 °C TOTAL CAPACITANCE CHARGE (VR=1200V, IF=5A, di/dt=500A/µs and TJ=25°C) QC per leg TYP 1.65 2.55 0.05 0.10 28 MAX. 1.80 3.00 0.20 1.00 N/A mA nC Volts UNITS • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SHB601052E SENSITRON Technical Data Datasheet 4308 REV. C Note: The following curves are for individual legs of the bridge. MECHANICAL DIMENSIONS (inches) MO-078 • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SHB601052E SENSITRON Technical Data Datasheet 4308 REV. C PINOUT TABLE DEVICE TYPE SINGLE PHASE FULL WAVE BRIDGE PIN 1 DC(+) PIN 2 DC(-) PIN 3 NC PIN 4 AC(1) PIN 5 AC(2) Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com •

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SHB601052E_08

1. 物料型号： - 型号名称：SHB601052E - 制造商：SENSITRON SEMICONDUCTOR - 数据手册版本：Datasheet 4308 REV.C

2. 器件简介： - 描述：1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE INA HERMETIC 5-LEAD TO-258(MO-078) PACKAGE - 特点：无恢复时间或反向恢复损耗，开关行为不受温度影响。

3. 引脚分配： - 单相全波整流桥的引脚表： - PIN1: DC(+) - PIN2: DC(-) - PIN3: NC（空脚） - PIN4: AC(1) - PIN5: AC(2)

4. 参数特性： - 最大反向峰值电压（PIV）：1200伏 - 最大直流输出电流（Io，T=65°C时作为桥使用）：10安培 - 最大重复性正向浪涌电流（IFRM，t=8.3ms，正弦波）每腿，Tc=25°C：30安培 - 最大非重复性正向浪涌电流（IFSM，t=10us，脉冲）每腿，Tc=25°C：100安培 - 最大结电容（CJ，Vj=5V）每腿：450皮法 - 最大功耗（Pd，T=25°C）：30瓦 - 最大热阻，结到外壳（RaJc，作为桥连接）：1.0°C/W - 最大工作和存储温度范围（Top, Tstg）：-55至+175°C

5. 功能详解： - 最大正向电压降（Ic=5A每腿）Vf，T=25°C：1.65V（典型值），1.80V（最大值） - TJ=150°C时：2.55V（典型值），3.00V（最大值） - 存储时间（trr，PL）：0.05μA（典型值），0.20μA（最大值） - TJ=150°C时：0.10μA（典型值），1.00μA（最大值） - 总电容电荷（Qc，Vr=1200V，I=5A，di/dt=500A/s和T=25°C）每腿：28nC

6. 应用信息： - 客户应意识到，根据SiC技术当前的发展阶段，该器件的反向雪崩能力是有限的。客户的设计需要适应这些限制，并在其应用中避免使器件暴露于此类及其他可能损坏的条件。

7. 封装信息： - 封装类型：TO-258(MO-078)，5引脚全密封陶瓷封装。

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