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SHD114546B

SHD114546B

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD114546B - HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature - Sensitron

  • 数据手册
  • 价格&库存
SHD114546B 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 1049, REV. A SHD114546 SHD114546A SHD114546B HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE SYMBOL PIV IO IFSM RθJC Top/Tstg Top/Tstg MAX. 200 60 860 0.70 -65 to + 200 -65 to + 175 UNITS Volts Amps Amps °C/W °C °C MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=100 OC) MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT (t=8.3ms, Sine) MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode) MAXIMUM JUNCTION TEMPERATURE RANGE MAXIMUM STORAGE TEMPERATURE RANGE ELECTRICAL CHARACTERISTICS CHARACTERISTIC MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 60 Amps) TJ = 25 °C TJ = 125 °C MAXIMUM REVERSE CURRENT (Ir @ 200V PIV) TJ = 25 °C TJ = 125 °C MAXIMUM JUNCTION CAPACITANCE (Vr =5V) SYMBOL MAX. UNITS Vf 0.95 0.79 1.1 24 900 Volts Ir CT mA pF *Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. ©2001 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com SHD114546 SHD114546A SHD114546B SENSITRON DATASHEET 1049, REV. A MECHANICAL DIMENSIONS: In Inches / mm .410±.010 (10.4±.254) .550±.020 (14.0±.508) .410±.010 (10.4±.254) .560± .020 (14.2±.508) .410±.010 (10.4±.254) .150±.010 (3.81±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .200±.010 (5.08 ±.254) .410±.010 (10.4±.254) .015±.005 (.381±.127) .075 (1.91) Max Alumina Ring Moly Lid .020±.005 R (.508±.127 ) Copper Anode .090 (2.29) Max Alumina Ring Moly Base (Cathode) .015±.002 (.381±.051) .060±.010 (1.52±.254) .020±.005 R (.508±.127 ) .075 (1.91) Max Alumina Ring Moly Base Moly Lid Moly Base (Cathode) Moly Anode .020±.002 (.508±.051) .060±.010 (1.52±.254) SHD-3 SHD-3A SHD-3B Typical Forward Characteristics 102 Instantaneous Reverse Current - I R (mA) 10 1 Typical Reverse Characteristics 200 °C 175 °C 150 °C 125 °C 10-1 100 200 °C 101 Instantaneous Forward Current - I F (A) 175 °C 100 °C 75 °C 10-2 50 °C 10-3 100 10 -4 25 °C 125 °C 0 40 80 120 160 200 Reverse Voltage - VR (V) 240 Typical Junction Capacitance Junction Capacitance - CT (pF) 1.0 25 °C 10-1 800 600 400 200 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - V F (V) ©2001 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com SHD114546 SHD114546A SHD114546B SENSITRON DATASHEET 1049, REV. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2001 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com
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