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SHD114645

SHD114645

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD114645 - POWER SCHOTTKY RECTIFIER Low Reverse Leakage - Sensitron

  • 数据手册
  • 价格&库存
SHD114645 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4757, REV. - SHD114645 SHD114645A SHD114645B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 °C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Per Package M ax. 150 120 1650 27 1.3 0.2 -65 to +175 -65 to +175 Units V A A mJ A °C/W °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition @ 120A, Pulse, TJ = 25 °C (per leg) measured at the leads @ 120A, Pulse, TJ = 125 °C (per leg) measured at the leads @V R = 150V, Pulse, TJ = 25 °C (per leg) @V R = 150V, Pulse, TJ = 125 ° C (per leg) @V R = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) M ax. 0.91 0.75 3 48 3000 Units V V mA mA pF • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 4757, REV. – Mechanical Dimensions: in inches / mm SHD114645 SHD114645A SHD114645B .410±.010 (10.4± .254) .550±.020 (14.0±.508) .410±.010 (10.4±.254) .560±.020 (14.2±.508) .410±.010 (10.4±.254) .150±.010 (3.81±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .200±.010 (5.08 ±.254) .410±.010 (10.4±.254) .015±.005 (.381±.127) .075 (1.91) Max Alumina Ring Moly Lid .020±.005 R (.508±.127 ) Copper Anode .090 (2.29) Max .020±.005 R (.508±.127 ) . 075 (1.91) Max Alumina Ring Moly Moly Lid Moly Base (Cathode) Moly Anode .020±.002 (.508±.051) .060±.010 (1.52±.254) Alumina Ring Moly Base (Cathode) .015±.002 (.381±.051) .060±.010 (1.52±.254) SHD-3 SHD-3A SHD-3B Typical Forward Characteristics 102 Instantaneous Reverse Current -RI (mA) 10 1 Typical Reverse Characteristics 175 °C 150 °C 125 °C 10-1 100 175 °C 101 100 °C 10-2 Instantaneous Forward Current -FI (A) 125 °C 75 °C 100 10-3 50 °C 10-4 25 °C 25 °C 0 10-1 Junction Capacitance - CT (pF) 2500 2000 20 40 60 80 100 120 Reverse Voltage - V ( V) R 140 160 Typical Junction Capacitance 25 °C 1500 1000 500 0 20 40 60 80 100 120 Reverse Voltage - V ( V) R 140 160 10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - V ( V) F 1.0 Vf Curves shown are for die only. • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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