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SHD118136B

SHD118136B

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD118136B - HERMETIC POWER SCHOTTKY RECTIFIER - Sensitron

  • 数据手册
  • 价格&库存
SHD118136B 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 913, REV. - SHD118136 SHD118136A SHD118136B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Ultra Low Reverse Leakage Applications: Features: œ œ œ œ œ œ œ œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Symbol VRWM IF(AV) IFSM EAS IAR R JC TJ Tstg Symbol VF1 VF2 IR1 IR2 CT trr ¡ Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Maximum Thermal Resistance Max. Junction Temperature Max. Storage Temperature Condition 50% duty cycle, rectangular wave form (per leg) 8.3 ms, half Sine wave (per leg) TJ = 25 •C, IAS = 0.4 A, L = 40mH IAS decay linearly to 0 in 1 ms ‹ limited by TJ max VA=1.5VR Condition @ 7.5A, Pulse, TJ = 25 •C @ 7.5A, Pulse, TJ = 125 •C @VR = 200V, Pulse, TJ = 25 •C @VR = 200V, Pulse, TJ = 125 •C @VR = 5V, TC = 25 •C fSIG = 1MHz, VSIG = 50mV (p-p) IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 •C Max. 200 7.5 140 7.7 0.4 0.85 -65 to +200 -65 to +200 Max. 0.92 0.76 0.008 0.5 150 25 Units V A A mJ A •C/W •C •C Units V V mA mA pF nsec Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Max. Junction Capacitance (per leg) Max. Reverse Recovery Time   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON DATA SHEET 913, REV. MECHANICAL DIMENSIONS: In Inches / mm .370±.010 (9.40±.254) SHD118136 SHD118136A SHD118136B .510±.020 (12.9±.508) .370±.010 (9.40±.254) .370±.010 (9.40±.254) .520±.020 (13.2±.508) 2 .610±.010 (15.5±.254) 3 .030±.010 (.762±.254) .125±.010 (3.17±.254) .090±.010 (2.29±.254) 2 .030±.010 (.762±.254) .610±.010 (15.5±.254) .320±.010 (8.13±.254) .030±.010 (.762±.254) .610±.010 (15.5±.254) 2 .320±.010 (8.13 ±.254) 3 3 .110 (2.80) Max Alumina Ring Terminal 1 .110 (2.79) Max Alumina Ring Moly Lid .020±.005 R (.508±.127 ) Copper Terminals .130 (3.30) Max Moly Lid .020±.005 R (.508±.127 ) SHD-5 Alumina Ring Moly Base Terminal 1 .060±.010 (1.52±.254) .020±.002 (.508±.051) Moly Base Terminal 1 .060±.010 (1.52±.254) .015±.002 (.381±.051) 1 2 3 COMMON CATHODE PINOUT TABLE DEVICE TYPE DUAL RECTIFIER, COMMON CATHODE (P) SHD-5A SHD-5B PIN 1 COMMON CATHODE PIN 2 ANODE PIN 3 ANODE Typical Forward Characteristics 101 101 Typical Reverse Characteristics 200 ° C 175 ° C 150 ° C 10-1 Instantaneous Reverse Current - IR (mA) 100 200 ° C 175 ° C 125 ° C 100 ° C 75 ° C 50 ° C Instantaneous Forward Current - IF (A) 100 10-2 10-3 10-4 25 ° C 10-1 125 ° C 10 -5 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 Typical Junction Capacitance Junction Capacitance - CT (pF) 25 ° C 10-2 120 80 40 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 10-3 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VF (V) 1.0   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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