SHD123634D

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4668, REV. PRELIMINARY SHD123634P SHD123634N SHD123634D POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: • Sw itching Pow er Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • • Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forw ard Voltage Drop Low Pow er Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 200 Volt Ultra Fast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) Condition 50% duty cycle, rectangular wave form Common Cathode (N)/Common Anode(P) 50% duty cycle, rectangular wave form Doubler (D) 8.3 ms, half Sine wave (per leg) TJ = 25 °C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Per Package Max. 100 150 Units V A IF(AV) IFSM EAS IAR RthJC TJ Tstg 120 1000 27 1.3 0.2 -65 to +200 -65 to +200 A A mJ A °C/W °C °C Electrical Characteristics: Condition Max. Units 0.99 V @ 120A, Pulse, TJ = 25 °C (per leg) measured at the leads 0.84 V VF2 @ 120A, Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 100V, Pulse, 0.06 mA TJ = 25 °C (per leg) 6 mA IR2 @VR = 100V, Pulse, TJ = 125 °C (per leg) 3000 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. Characteristics Max. Forward Voltage Drop Symbol VF1 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SHD123634P SHD123634N SHD123634D TECHNICAL DATA DATA SHEET 4668, REV. PRELIMINARY Mechanical Dimensions: in inches / mm 1.27 (32.26 1.23 31.24) 0.64 (16.26 0.60 15.24) 0.720 (18.29 0.680 17.27) 1 0.167 (4.24 Dia 0.147 3.73) 0.220 (5.59 0.180 4.57) 3 Places 0.030 (0.762 0.010 0.254) 0.260(6.61) Max 2 3 0.50(12.70) Min 0.370 (9.40 0.330 8.38) 0.40(10.16) Typ Epoxy Shell Heat Sink 0.180 (4.57 0.140 3.55) Typical Forward Characteristics 103 Instantaneous Reverse Current - IR (mA) Typical Reverse Characteristics 175 °C 102 150 °C 125 °C 100 °C 175 °C 102 101 Instantaneous Forward Current - IF (A) 10 0 75 °C 10-1 50 °C 10-2 25 °C 125 °C 0 10 20 30 Reverse Voltage - VR (V) 40 50 Typical Junction Capacitance Junction Capacitance - CT (pF) 25 °C 5000 4000 3000 2000 1000 0 10 20 30 Reverse Voltage - VR (V) 40 50 101 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - VF (V) 0.8 Vf Curves Shown are for die only. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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