SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 1042, REV. PRELIMINARY
SHD123636P SHD123636N SHD123636D
POWER SCHOTTKY RECTIFIER Low Reverse Leakage
Applications: Features:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 200 Volt Ultra Fast Rectifiers Symbol VRWM IF(AV) IF(AV) IFSM EAS IAR RthJC TJ Tstg Symbol VF1 Condition 50% duty cycle, rectangular wave form Common Cathode (N)/Common Anode(P) 50% duty cycle, rectangular wave form Doubler (D) 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 ms limited by TJ max VA=1.5VR Per Package Max. 200 150 120 1650 27 1.3 0.2 -65 to +175 -65 to +175 Units V A A A mJ A C/W C C
Maximum Ratings:
Characteristics Peak Inverse Voltage Max. Average Forward Current
Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature
Condition Max. Units 1.07 V @ 120A, Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.91 V @ 120A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V, Pulse, 0.6 mA TJ = 25 C (per leg) IR2 @VR = 200V, Pulse, 6.0 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 1800 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys.
Electrical Characteristics:
Characteristics Max. Forward Voltage Drop
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 W orld Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SHD123636P SHD123636N SHD123636D TECHNICAL DATA DATA SHEET 1042, REV. PRELIMINARY Mechanical Dimensions: in inches / mm
1.27 (32.26 1.23 31.24) 0.64 (16.26 0.60 15.24) 0.720 (18.29 0.680 17.27) 1 0.167 (4.24 Dia 0.147 3.73) 0.220 (5.59 0.180 4.57) 3 Places 0.030 (0.762 0.010 0.254) 0.260(6.61) Max 0.180 (4.57 0.140 3.55) 2 3 0.50(12.70) Min 0.370 (9.40 0.330 8.38)
0.40(10.16) Typ
Epoxy Shell
Heat Sink
Typical Forward Characteristics
Typical Reverse Characteristics
Instantaneous Reverse Current - IR (mA)
102
101
200 ° C 175 ° C 150 ° C 125 ° C 100 ° C
100
200 ° C 175 ° C
10-1
Instantaneous Forward Current - IF (A)
101
10
-2
75 ° C 50 ° C 25 ° C
0 40 80 120 160 200 Reverse Voltage - VR (V) 240
10-3
100
125 ° C
10-4
Typical Junction Capacitance
Junction Capacitance - CT (pF) 1.0
25 ° C
10-1
2000 1500 1000 500 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240
10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VF (V)
Vf Curves Shown are for die only.
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 W orld Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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