SHD124446N

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 923, REV. A SHD124446 SHD124446P SHD124446N SHD124446D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Features: œ œ œ œ œ œ œ Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) IFSM EAS IAR ¡ Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance (per leg) Thermal Resistance (per leg) Max. Junction Temperature Max. Storage Temperature R ¡ JC R JC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 •C, IAS = 0.75 A, L = 40mH IAS decay linearly to 0 in 1 ms ‹ limited by TJ max VA=1.5VR (common cathode, common anode, doubler) (single rectifier) - Max. 200 30 200 16 0.75 0.39 0.77 -65 to +200 -65 to +175 Units V A A mJ A •C/W •C/W •C •C Units V V mA mA pF nsec Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Reverse Recovery Time CT trr Condition @ 30A, Pulse, TJ = 25 •C @ 30A, Pulse, TJ = 125 •C @VR = 200V, Pulse, TJ = 25 •C @VR = 200V, Pulse, TJ = 125 •C @VR = 5V, TC = 25 •C fSIG = 1MHz, VSIG = 50mV (p-p) IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 •C     Max. 1.09 0.93 0.7 16 600 50     221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com         SHD124446 SHD124446P SHD124446N SHD124446D TECHNICAL DATA DATA SHEET 923, REV. – Mechanical Dimensions: In inches / mm .165 (4.19 Dia. .155 3.94) .695 (17.65 .685 17.40) .270 (6.86 .240 6.10) .045 (1.14 .035 0.89) SINGLE COMMON CATHODE 1 .707 (17.96 .697 17.70) 1.302 (33.07 1.202 30.53) .835 (21.21 .815 20.70) .550 (13.97 .530 13.46) 2 3 1 2 DOUBLER 3 COMMON ANODE 1 2 3 1 2 3 3 2 1 .065 (1.65 .055 1.40) 3 Places .200(5.08) BSC 2 Places .140(3.56) BSC TO-258 PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/CATHODE PIN 3 ANODE 2 CATHODE 2 CATHODE PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) Curves shown are for bare die only. Typical Forward Characteristics PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE Typical Reverse Characteristics 101 Instantaneous Reverse Current - I R (mA) 10 10 0 200 ° C 175 ° C 150 ° C 101 200 ° C 175 ° C -1 125 ° C 100 ° C 75 ° C Instantaneous Forward Current - I F (A) 10-2 10-3 100 50 ° C 10-4 10-5 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 25 ° C 125 ° C 10-1 Junction Capacitance - CT (pF) Typical Junction Capacitance 25 ° C 600 450 300 150 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - V F (V) 1.0     221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586-7600 Fax (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com             SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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