SHD124446_11

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 923, REV. A SHD124446 SHD124446P SHD124446N SHD124446D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Diode Converters Free-Wheeling Diodes Polarity Protection Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Reverse Leakage Current Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance (per leg) Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR R JC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 0.75 A, L = 40mH IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR (single rectifier) Max. 200 30 200 16 0.75 1.5 -65 to +200 -65 to +175 Units V A A mJ A C/W C C Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Reverse Recovery Time CT Condition @ 30A, Pulse, TJ = 25 C @ 30A, Pulse, TJ = 125 C @VR = 200V, Pulse, TJ = 25 C @VR = 200V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) IF = 0.5 A, IR = 1.0 A, IRM = 0.25 A, TJ = 25 C Max. 1.09 0.93 0.7 16 600 Units V V mA mA pF trr 50 nsec 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHD124446 SHD124446P SHD124446N SHD124446D TECHNICAL DATA DATA SHEET 923, REV. A Mechanical Dimensions: In inches / mm .165 (4.19 Dia. .155 3 .94) .695 (17.65 .685 1 7.40) .270 (6.86 .240 6 .10) .045 (1.14 .035 0 .89) SINGLE COMMON CATHODE 1 .707 (17.96 .697 1 7.70) 1.302 (33.07 1 .202 3 0.53) .835 (21.21 .815 2 0.70) .550 (13.97 .530 1 3.46) 2 3 1 2 DOUBLER 3 COMMON ANODE 1 2 3 1 2 3 3 2 1 .065 (1.65 .055 1 .40) 3 Plac es .200(5.08) BSC 2 P lac es .140(3.56) BSC TO-258 PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) Curves shown are for bare die only. Typical Forward Characteristics PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/CATHODE PIN 3 ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics 101 200 °C 175 °C 150 °C Instantaneous Reverse Current - I R (mA) 10 0 101 200 °C 175 °C 10 -1 125 °C 100 °C 75 °C Instantaneous Forward Current - I F (A) 10-2 10-3 100 50 °C 10-4 25 °C 125 °C 10-5 0 40 80 120 160 Reverse Voltage - R (V) V 200 240 10-1 Typical Junction Capacitance Junction Capacitance - C T (pF) 25 °C 600 450 300 150 0 0 40 80 120 160 Reverse Voltage - R (V) V 200 240 10-2 0 .0 0.2 0.4 0.6 0.8 Forward Voltage Drop -FV(V) 1.0 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHD124446 SHD124446P SHD124446N SHD124446D TECHNICAL DATA DATA SHEET 923, REV. A DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the late st version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medica l equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause durin g operation of the user’s units according to the datasheet(s). Sensitr on Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liabl e for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semicon ductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any th ird party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. 2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com