SHD124546N

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4695, REV. - SHD124546 SHD124546P SHD124546N SHD124546D HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Applications: • Sw itching Pow er Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • Soft Reverse Recovery at Low and High Temperature Low Forw ard Voltage Drop Low Pow er Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Thermal Resistance Max. Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) Condition 50% duty cycle, rectangular wave form (Single/Doubler) 50% duty cycle, rectangular wave form (Common Cathode/Common Anode) 8.3 ms, half Sine wave (per leg) (Single) (Common Cathode/Common Anode/Doubler) (per leg) Max. 200 45 45 Units V A A IFSM RθJC RθJC TJ Tstg 200 0.60 0.30 -65 to +200 -65 to +200 A °C/W °C/W °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition @ 45A, Pulse, TJ = 25 °C (per leg) @ 45A, Pulse, TJ = 125 °C (per leg) @VR = 200V, Pulse, TJ = 25 °C (per leg) @VR = 200V, Pulse, TJ = 125 °C (per leg) @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) (per leg) Max. 1.18 1.02 1.1 24 900 Units V V mA mA pF • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • TECHNICAL DATA DATA SHEET 4695, REV. Mechanical Dimensions: In Inches / mm .165 (4.19 Dia. .155 3.94) .695 (17.65 .685 17.40) .270 (6.86 .240 6.10) .045 (1.14 .035 0.89) SHD124546 SHD124546P SHD124546N SHD124546D SINGLE COMMON CATHODE 1 .707 (17.96 .697 17.70) 1.302 (33.07 1.202 30.53) .835 (21.21 .815 20.70) .550 (13.97 .530 13.46) 2 3 1 2 DOUBLER 3 COMMON ANODE 1 2 3 1 2 3 1 2 3 .065 (1.65 .055 1.40) 3 Places .200(5.08) BSC 2 Places .140(3.56) BSC TO-258 PINOUT TABLE TYPE PIN 1 PIN 2 SINGLE RECTIFIER CATHODE ANODE DUAL RECTIFIER, COMMON CATHODE (P) ANODE 1 COMMON CATHODE DUAL RECTIFIER, COMMON ANODE (N) CATHODE 1 COMMON ANODE DUAL RECTIFIER, DOUBLER (D) ANODE CATHODE/ANODE Note: The Vf curves shown are for the SD200SC200 un-packaged die only. Typical Forward Characteristics 10 2 PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics 200 °C Instantaneous Reverse Current - IR (mA) 10 1 175 °C 150 °C 125 °C 100 200 °C 101 Instantaneous Forward Current - I F (A) 175 °C 10 -1 100 °C 75 °C 10-2 50 °C 10-3 100 10-4 25 °C 125 °C 0 40 80 120 160 200 Reverse Voltage - VR (V) 240 Typical Junction Capacitance Junction Capacitance - CT (pF) 1.0 25 °C 10-1 800 600 400 200 0 0 40 80 120 160 Reverse Voltage - VR (V) 200 240 10-2 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VF (V) • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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