SHD125034D

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 372, REV. A SHD125034P SHD125034N SHD125034D Applications: Features: œ œ œ œ œ œ œ œ SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 100 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy (per leg) Repetitive Avalanche Current (per leg) Maximum Thermal Resistance (Junction to Mounting Surface) (per leg) Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave TJ = 25 •C, IAS = 0.23A, L = 130 mH IAS decay linearly to 0 in 1 ms ‹ limited by TJ max VA=1.5VR Max. 100 6.0 3.0 55 3.5 0.23 9.2 Units V A -Common Cathode (P) / Anode (N) -Doubler (D) IFSM EAS IAR R ¡ A mJ A •C/W •C •C JC TJ Tstg - -65 to +200 -65 to +175 Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Max. Junction Capacitance (per leg) Symbol VF1 VF2 IR1 IR2 CT Condition @ 3A, Pulse, TJ = 25 •C @ 3A, Pulse, TJ = 125 •C @VR = 100V, Pulse, TJ = 25 •C @VR = 100V, Pulse, TJ = 125 •C @VR = 5V, TC = 25 •C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.94 0.78 5.0 0.25 100 Units V V mA mA pF   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               TECHNICAL DATA DATA SHEET 372, REV. Mechanical Dimensions: In Inches / mm .149 (3.78 Dia. .139 3.53) .545 (13.84 .535 13.60) .260 .249 .050 .040 (6.60 6.32) (1.27 1.02) SHD125034P SHD125034N SHD125034D SINGLE COMMON CATHODE 1 2 3 1 2 DOUBLER 3 .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) .800 (20.32 .790 20.07) .545 (13.84 .535 13.58) COMMON ANODE 1 2 3 1 .045 (1.14 .035 0.89) 3 Places .150(3.81) BSC 2 Places .150(3.81) BSC 2 3 3 2 1 TO-254 PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER, COMMON CATHODE (P) DUAL RECTIFIER, COMMON ANODE (N) DUAL RECTIFIER, DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Forward Characteristics 10 Instantaneous Reverse Current - I R (mA) 1 Typical Reverse Characteristics 100 200° C 175 ° C 150 ° C 125 ° C 200 ° C 10 Instantaneous Forward Current - I F (A) 0 10 -1 10-2 100 ° C 75 ° C 50 ° C 175 ° C 10-3 10-1 125 ° C 10-4 25 ° C 10 -5 0 20 40 60 80 100 Reverse Voltage - VR (V) 120 Junction Capacitance - C T (pF) 25 ° C 10 -2 Typical Junction Capacitance 90 80 70 60 50 40 30 20 10 0 20 40 60 80 Reverse Voltage - VR (V) 100 120 10 -3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - V F (V) 0.8 Note: The Vf curves shown are for the SD060SCU100 unpackaged die only.   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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