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SHD126011

SHD126011

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD126011 - SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150°C Operating Temperature - Sens...

  • 数据手册
  • 价格&库存
SHD126011 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4745, REV. A SHD126011 SHD126011P SHD126011N SHD126011D SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Condition Maximum DC Output Current O (@ TC =100 C) (Single, Doubler) Maximum DC Output Current O (@ TC =100 C) (Common Cathode, Common Anode) 8.3 ms, half Sine wave M ax. 30 3.0 Units V A Max. Average Forward Current IF(AV) 6.0 A Max. Peak One Cycle NonRepetitive Surge Current Maximun Thermal Resistence (Single) Maximun Thermal Resistence (Common Cathode, Common Anode, Doubler) Max. Junction Temperature Max. Storage Temperature IFSM RθJC RθJC TJ Tstg 55 6.35 3.17 A °C/W °C/W °C °C - -65 to +150 -65 to +150 Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 3A, Pulse, TJ = 25 °C @ 3A, Pulse, TJ = 125 °C @V R = 30V, Pulse, TJ = 25 °C @V R = 30V, Pulse, TJ = 125 ° C @V R = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) M ax. 0.59 0.49 0.4 20 220 Units V V mA mA pF • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATASHEET 4745, REV. A Mechanical Dimensions: In Inches / mm .150 (3.81 .140 3.56) .200 (5.08 Dia. .420 (10.67 .410 10.41) .190 4.82) .045 (1.14 .035 0.89) SHD126011 SHD126011P SHD126011N SHD126011D .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 DEVICE TYPE PIN 1 SINGLE RECTIFIER CA THODE COMMON CATH ODE (P) ANODE 1 COMMON ANODE (N) CATHODE 1 DOUBLER (D) ANODE Note: Vf characteristics are for unpackaged die only. Typical Forward Characteristics 10 2 PIN 2 ANODE COMMON CATHODE COMMON ANODE CATHODE / ANODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics 150 °C Instantaneous Reverse Current - R (mA) I 101 125 °C 100 150 °C 100 °C 75 °C Instantaneous Forward Current - F (A) I 100 10-1 50 °C 10-2 25 °C 10-3 0 10 20 30 Reverse Voltage -RVV) ( 40 125 °C 10-1 25 °C Junction Capacitance - C (pF) T 190 170 150 130 110 0 Typical Junction Capacitance 10-2 0 .0 0.1 0.2 0.3 0.4 0.5 Forward Voltage Drop - V F (V) 0.6 10 20 30 Reverse Voltage -RVV) ( 40 • 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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