SHD126213

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4780, REV. B SHD126213 SHD126213D SHD126213N SHD126213P SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Junction Temperature Max. Storage Temperature Thermal Resistance Symbol VRWM IF(AV) IFSM TJ Tstg RθJC Condition 50% duty cycle, rectangular wave form (Single/Doubler) 8.3 ms, half Sine wave Max. 60 16 280 -65 to +150 -65 to +150 1.45 Units V A A °C °C °C/W Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 16A, Pulse, TJ = 25 °C @ 16A, Pulse, TJ = 125 °C @VR = 60V, Pulse, TJ = 25 °C @VR = 60V, Pulse, TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.79 0.74 2 140 800 Units V V mA mA pF • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • TECHNICAL DATA DATA SHEET 4780, REV. B Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) SHD126213 SHD126213D SHD126213N SHD126213P .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 DEVICE TYPE SINGLE RECTIFIER COMMON CATHODE (P) COMMON ANODE (N) DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE CATHODE / ANODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - I R (mA) 102 101 101 125 °C 100 °C 100 (A) 75 °C 10-1 Instantaneous Forward Current - I F 50 °C 10-2 125 °C 100 25 °C 10-3 25 °C 0 10 20 30 40 Reverse Voltage - V R (V) 50 60 Typical Junction Capacitance Junction Capacitance - C T (pF) 0.0 0.2 0.4 0.6 Forward Voltage Drop - V F (V) 0.8 800 700 600 500 400 300 200 0 10 20 30 40 50 Reverse Voltage - V R (V) 60 10 -1 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SHD126213 SHD126213D SHD126213N SHD126213P TECHNICAL DATA DATA SHEET 4780, REV. B DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •