SHD126234P

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 653, REV. D SHD126234 SHD126234P SHD126234N SHD126234D Applications: Features: œ œ œ œ œ œ œ œ œ œ HERMETIC POWER SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200•C Operating Temperature œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Out Performs 100 Volt Ultrafast Rectifiers Add Prefix C to SHD – For Ceramic Seals (SHDC) Add Suffix SS For JANS Screening Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) IFSM R JC TJ Tstg ¡ Condition 50% duty cycle, rectangular wave form (Single & Doubler) 50% duty cycle, rectangular wave form (Common Anode & Common Cathode) 8.3 ms, half Sine wave (per leg) (per leg) - Max. 100 15 16 75 2.1 -65 to +200 -65 to +175 Units V A A A •C/W •C •C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 Max. Reverse Current IR1 IR2 Max. Junction Capacitance CT Condition @ 15A, Pulse, TJ = 25 •C (per leg) @ 15A, Pulse, TJ = 125 •C (per leg) @VR = 100V, Pulse, TJ = 25 •C (per leg) @VR = 100V, Pulse, TJ = 125 •C (per leg) @VR = 5V, TC = 25 •C fSIG = 1MHz, VSIG = 50mV (p-p) (per leg) Max. 0.93 0.84 .01 1.0 500 Units V V mA mA pF   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON TECHNICAL DATA DATA SHEET 653, REV. C Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) SHD126234 SHD126234P SHD126234N SHD126234D SINGLE COMMON CATHODE 1 2 3 1 2 DOUBLER 3 .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) COMMON ANODE 1 2 3 1 2 3 3 2 1 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PINOUT TABLE TYPE PIN 1 PIN 2 SINGLE RECTIFIER CATHODE ANODE DUAL RECTIFIER, COMMON CATHODE (P) ANODE 1 COMMON CATHODE DUAL RECTIFIER, COMMON ANODE (N) CATHODE 1 COMMON ANODE DUAL RECTIFIER, DOUBLER (D) ANODE ANODE/CATHODE Note: The Vf curves shown are for the SD125SCU100 unpackaged die only. Typical Forward Characteristics 101 Instantaneous Reverse Current - I R (mA) PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics 200 ° C 175 ° C 100 150 ° C 125 ° C 100 ° C 101 200 ° C 175 ° C 10-1 Instantaneous Forward Current - I F (A) 10 -2 75 ° C 50 ° C 100 10-3 10-4 25 ° C 0 20 40 60 80 100 Reverse Voltage - VR (V) 120 125 ° C 10-1 Junction Capacitance - C T (pF) 25 ° C Typical Junction Capacitance 400 300 200 100 0 20 40 60 80 Reverse Voltage - VR (V) 100 120 10-2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage Drop - V F (V) 0.8   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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