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SHD218508

SHD218508

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD218508 - HERMETIC POWER MOSFET N-CHANNEL - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SHD218508 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B SHD218508 SHD218508A SHD218508B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching Low RDS (on) Similar to Part Type IRFAG50 ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID ID IDM TJ /TSTG RthJC PD MIN. -55 TYP. MAX. ±20 5.6 3.5 22 +150 0.6 200 UNITS Volts Amps Amps Amps °C °C/W Watts MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT ON-STATE DRAIN CURRENT TC = 100° C PULSED DRAIN CURRENT OPERATING AND STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE TOTAL DEVICE DISSIPATION ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 3.5A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA FORWARD TRANSCONDUCTANCE VDS ≥ 15V, IDS = 3.5A ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C TJ = 125°C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = 400V, RISE TIME ID = 5.6A, TURN OFF DELAY TIME RG = 2.35Ω FALL TIME DIODE FORWARD VOLTAGE IS = 5.6A, VGS = 0V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % REVERSE RECOVERY TIME TJ = 25°C, IF = 5.6A, VDD ≤ 50V, di/dt = 100A/µsec INPUT CAPACITANCE VGS = 0 V OUTPUT CAPACITANCE VDS = 25 V REVERSE TRANSFER CAPACITANCE f = 1.0MHz SYMBOL BVDSS MIN. 1000 RDS(ON) VGS(th) gfs 2.0 5.2 TYP. MAX. 2.0 4.0 Ω Volts S(1/ Ω ) µA nA UNITS Volts IDSS IGSS td(ON) tr td(OFF) tf VSD - - 25 250 100 -100 30 44 210 60 1.8 nsec - - Volts trr Ciss Coss Crss - 2400 240 80 1200 - nsec pF •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E- Mail Address - sales@sensitron.com • SHD218508 SHD218508A SHD218508B SENSITRON TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B MECHANICAL DIMENSIONS: in Inches / mm .370±.010 (9.40±.254) .370±.010 (9.40±.254) .510±.020 (12.9±.508) .520±.020 (13.2±.508) .370±.010 (9.40±.254) .125±.010 (3.17±.254) 2 .610±.010 (15.5 ±.254) 3 .030±.010 (.762±.254) .090±.010 (2.29±.254) 2 .030±.010 (.762±.254) .610±.010 (15.5±.254) .320±.010 (8.13±.254) 2 .030±.010 (.762±.254) .610±.010 (15.5±.254) .320±.010 (8.13 ±.254) 3 .110 (2.80) Max 3 Alumina Ring Terminal 1 .110 (2.79) Max Alumina Ring Moly Base Terminal 1 Moly Lid .020±.005 R (.508±.127 ) SHD-5 Copper Terminals .130 (3.30) Max .020±.002 (.508±.051) Moly Lid .020±.005 R (.508±.127 ) Alumina Ring Moly Base Terminal 1 .060±.010 (1.52±.254) .015±.002 (.381±.051) .060±.010 (1.52±.254) SHD-5A SHD-5B PINOUT TABLE DEVICE TYPE MOSFET, SURFACE MOUNT SHD-5, 5A, 5B PACKAGE PIN 1 DRA IN PIN 2 SOURCE PIN 3 GATE •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E- Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD218508
1. 物料型号: - 型号:SHD218508、SHD218508A、SHD218508B。这些型号之前称为SHD2188/A/B。

2. 器件简介: - 该器件是一个N沟道MOSFET,具有1000伏特、2.0欧姆、5.6安培的规格。它采用密封陶瓷封装,具有快速开关和低导通电阻特性,类似于IRFAG50型号。

3. 引脚分配: - 引脚1:漏极(DRAIN) - 引脚2:源极(SOURCE) - 引脚3:栅极(GATE)

4. 参数特性: - 最大额定值: - 栅源电压(VGS):+20伏特 - 导通漏电流(ID):5.6安培(T=100°C时为3.5安培) - 脉冲漏电流(IDM):22安培 - 工作和存储温度(TJ/TSTG):-55至+150摄氏度 - 热阻(RthJC):0.6摄氏度/瓦特 - 总器件耗散功率(PD):200瓦特 - 电气特性: - 漏源击穿电压(BVdss):1000伏特 - 静态漏源导通电阻(RDS(ON)):2.0欧姆 - 栅阈值电压(VGS(th)):2.0至4.0伏特 - 前向跨导(gts):5.2 S(1/2) - 零栅压漏源电压(Ids):250微安(25°C时) - 栅源漏电流(Igss):±100纳安 - 导通延迟时间(td(ON)):30纳秒 - 关闭延迟时间(td(OFF)):44纳秒 - 漏源二极管正向电压(VSD):1.8伏特 - 反向恢复时间(trr):1200纳秒 - 输入电容(Ciss)、输出电容(Coss)、反向传输电容(Crss):2400/240/80皮法

5. 功能详解应用信息: - 该MOSFET适用于需要高电压、低导通电阻和快速开关的应用场合。

6. 封装信息: - 封装类型为SHD-5B,这是一种表面贴装的5脚、5A、5B封装。
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