SHD224802

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4203, REV. A SHD224802 SHDCG224802 Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package L ow RDS (on); Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings Ceramic Seals with Glidcop leads (SHDCG224802) ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID25 ID100 IDM EAS IAR PD TJ/TSTG RθJC MAXIMUM RATINGS RATING MIN. -55 - TYP. - MAX. ± 20 47 30 140 1800 20 300 6000 +150 0.5 UNITS Volts Amps Amps Amps mJ A Watts V/µsec °C °C/W GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT ON-STATE DRAIN CURRENT T=100 oC PULSED DRAIN CURRENT AVALANCHE ENERGY SINGLE PULSE ID = 10A, VDD = 50V AVALANCHE CURRENT TOTAL DEVICE DISSIPATION REVERSE DIODE dv/dt; IS = 47A; VDS = 480V OPERATING AND STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250µA STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A T = 150°C STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30A T = 150°C GATE THRESHOLD VOLTAGE VDS = VGS , ID = 2 .7 mA FORWARD TRANSCONDUCTANCE VDS = 15V, ID = 3 0A ZERO GATE VOLTAGE DRAIN CURRENT VDS = Max. rating, VGS = 0V, TJ = 2 5 °C TJ = 1 50°C GATE TO SOURCE LEAKAGE FORWARD VGS = 2 0V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TURN ON DELAY TIME VDD = 380V RISE TIME ID = 47A TURN OFF DELAY TIME VGS=13V FALL TIME R G = 1.8 Ω GATE CHARGE VDD = 350V, ID = 4 7A, VGS = 1 0V DIODE FORWARD VOLTAGE IF = 47A, VGS = 0 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % REVERSE RECOVERY TIME TJ = 25°C, IF=47A, VR = 3 50V di/dt = 100A/ µsec INPUT CAPACITANCE VGS = 0 V, OUTPUT CAPACITANCE VDS = 25 V, REVERSE TRANSFER CAPACITANCE f = 1.0MHz SYMBOL BVDSS RDS(ON) Standard Version RDS(ON) Glidcop Version VGS(th) gfs MIN. 600 TYP. - MAX. - UNITS Volts Ω 2.1 - 0.07 0.18 0.06 0.16 3 40 0.08 Ω 0.07 3.9 - Volts S(1/Ω ) µA nA IDSS IGSS td(ON) tr td(OFF) tf Qg VSD - 0.5 18 27 111 8 252 1.0 25 250 100 -100 165 12 320 1.2 nsec - nC Volts trr Ciss Coss Crss - 580 6800 2200 145 - nsec pF •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SHD224802 SHDCG224802 SENSITRON TECHNICAL DATA DATA SHEET 4203, REV. A MECHANICAL DIMENSIONS: in Inches / mm .165 (4.19 .155 3.94) Dia. .695 (17.65 .685 17.40) .270 (6.86 .240 6.10) .045 (1.14 .035 0.89) .707 (17.96 .697 17.70) 1.302 (33.07 1.202 30.53) .835 (21.21 .815 20.70) .550 (13.97 .530 13.46) 1 2 3 .065 (1.65 .055 1.40) 3 Places .200(5.08) BSC 2 Places .140(3.56) BSC TO-258 DEVICE TYPE N-CHANNEL MOSFET TO-258 PACKAGE P IN-1 DRAIN P IN-2 SOURCE P IN-3 GATE •221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798• • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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