SHD226305B

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 336, REV. A SHD226305 SHD226305B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG R JC PD ¡ VGS=10V, TC = 25•C VGS=10V, TC = 100•C PULSED DRAIN CURRENT @ TC = 25•C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25•C MIN. -55 - TYP. - MAX. –20 3.7 2.4 14 +150 1.45 80 UNITS Volts Amps Amps •C •C/W Watts ELECTRICAL CHARACTERISTICS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 2.4A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA FORWARD TRANSCONDUCTANCE VDS ˜ 15V, ID = 2.4A ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25•C (VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125•C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TOTAL GATE CHARGE VGS = 10 V, GATE TO SOURCE CHARGE VDS = 0.5 x. VDS Max., GATE TO DRAIN CHARGE ID =3.7A TURN ON DELAY TIME VDD = 250V, RISE TIME ID = 3.7A, TURN OFF DELAY TIME RG = 7.5W, FALL TIME VGS = 10V DIODE FORWARD VOLTAGE TJ = 25•C, IS = 3.7A, VGS = 0V REVERSE RECOVERY TIME TJ = 25•C, Is = 3.7A, di/dt ˆ = 100A/msec, REVERSE RECOVERY CHARGE VDD ˆ 50V INPUT CAPACITANCE VGS = 0V, VDS = 25V OUTPUT CAPACITANCE f=1MHz REVERSE TRANSFER CAPACITANCE BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(ON) tr td(OFF) tf VSD trr Qrr Ciss Coss Crss 500 2.0 1.5 19.8 2.2 5.5 - - 1.6 4.0 25 250 100 -100 29.5 4.6 19.7 35 30 55 30 1.4 900 7.0 - Volts W Volts S(1/W) mA nA nC nsec Volts nsec mC pF - - - 610 135 65   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON DATA SHEET 336 REVISION A SHD226305 SHD226305B MECHANICAL DIMENSIONS: in Inches / mm TO-257 .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .717 (18.21 .687 17.45) .537 (13.64 .527 13.39) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) .060(1.52)R .170(4.32) 1 2 3 .120(3.05) BSC .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .250(6.35) Min Lead Form Option B PINOUT TABLE DEVICE TYPE MOSFET TO-257 PACKAGE PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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