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SHD226314

SHD226314

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD226314 - HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SHD226314 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 816, REV. - SHD226314 HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL œ œ œ œ 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS (on) Logic Level Gate Driver ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG R JC PD ¡ MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT @ TC = 25•C PULSED DRAIN CURRENT @ TC = 25•C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25•C MIN. -55 - TYP. - MAX. –20 20* 110 +175 1.32 110 UNITS Volts Amps Amps(pk) •C •C/W Watts ELECTRICAL CHARACTERISTICS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250mA GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 5.0Vdc, ID = 18A VGS = 4.0Vdc ID = 15A ZERO GATE VOLTAGE DRAIN CURRENT VDS = Max. Rating, VGS = 0Vdc VDS = 0.8xMax. Rating VGS = 0Vdc, TJ = 150•C GATE TO BODY LEAKAGE CURRENT VGS = –20Vdc, BVDSS VGS(th) RDS(ON) IDSS IGSS Qg Qgs Qgd td(ON) tr td(OFF) tf VSD trr Ciss Coss Crss 60 1.0 - - 2.0 0.055 0.075 25 250 –100 35 7.1 25 - Volts Volts W mA nA nC nsec - 14 170 30 56 120 1600 660 170 TOTAL GATE CHARGE VGS = 5.0 Vdc GATE TO SOURCE CHARGE VDS = 48V, GATE TO DRAIN CHARGE ID = 30A TURN ON DELAY TIME VDD = 30V, RISE TIME ID = 30A, TURN OFF DELAY TIME RG = 6.0W FALL TIME VGS = 5.0V FORWARD VOLTAGE TJ = 25•C, IS = 30A, VGS = 0V REVERSE RECOVERY TIME IF = 30A, REVERSE RECOVERY CHARGE di/dt ˆ 100A/msec, INPUT CAPACITANCE OUTPUT CAPACITANCE REVERSE TRANSFER CAPACITANCE * Current is limited by package VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz - 1.6 180 - Volts nsec pF   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com               SHD226314 SENSITRON DATA SHEET 816, REV. MECHANICAL DIMENSIONS: in Inches / mm .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PINOUT TABLE DEVICE TYPE N CHANNEL MOSFET IN A TO-257 PACKAGE PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD226314
1. 物料型号: - 型号:SHD226314

2. 器件简介: - 该器件是一个60V N-Channel逻辑电平功率MOSFET,具有快速开关特性和低导通电阻(RDS(on)),适用于需要逻辑电平门驱动的应用。

3. 引脚分配: - TO-257封装的N-Channel MOSFET引脚如下: - PIN1: DRAIN(漏极) - PIN2: SOURCE(源极) - PIN3: GATE(栅极)

4. 参数特性: - 最大额定值: - 栅源电压(VGS):+20V - 连续漏极电流(@T=25°C):20A - 脉冲漏极电流(Tc=25°C):110A(峰值) - 工作和存储温度:-55°C至+175°C - 结到外壳的热阻:1.32°C/W - 总器件耗散功率@Ta=25°C:110W - 电气特性: - 漏源击穿电压:60V - 栅阈值电压:1.0V至2.0V - 漏源导通电阻:0.055Ω至0.075Ω - 零栅电压漏极电流:25μA至250μA - 栅到源极漏电流:±100nA - 总栅电荷、栅到源极电荷、栅到漏极电荷:35nC、7.5nC、25nC - 导通延迟时间、上升时间、关断延迟时间、下降时间:14ns、170ns、30ns、56ns - 正向电压:1.6V - 反向恢复时间、反向恢复电荷:120ns、180ns - 输入电容、输出电容、反向传输电容:1600pF、660pF、170pF

5. 功能详解: - 该MOSFET具有快速开关能力,低导通电阻,适用于需要逻辑电平门驱动的高效率功率转换应用。

6. 应用信息: - 适用于需要高效率和快速开关的功率转换应用,如电源管理、电机控制等。

7. 封装信息: - 封装类型:TO-257 - 机械尺寸:详细图纸请参考文档中的图片链接。
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