SHD226405

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. C SHD226405 SHD226405B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 0.85, Ohm, 7A MOSFET • Isolated • Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID ID IDM TOP/TSTG RθJC PD MIN. -55 TYP. MAX. ±20 7 4.4 28 +150 2.1 100 UNITS Volts Amps Amps Amps °C °C/W Watts RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT T C = 2 5° C CONTINUOUS DRAIN CURRENT TC = 100°C PULSED DRAIN CURRENT @ TC = 25°C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25°C ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 4.4A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250μA FORWARD TRANSCONDUCTANCE VDS ≥ 15V, ID = 4.4A ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C (VDS = 0.8 x Max. Rating, VGS = 0V), TJ = 125°C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TOTAL GATE CHARGE VGS = 10V, GATE TO SOURCE CHARGE VDS = 250V, GATE TO DRAIN CHARGE I D = 7A TURN ON DELAY TIME VDD = 250V, RISE TIME ID = 7A, TURN OFF DELAY TIME RG = 9.1Ω, FALL TIME VGS = 10V CONTIUOUS SOURCE CURRENT DIODE FORWARD VOLTAGE TJ = 25°C,IS = 7A VGS = 0V REVERSE RECOVERY TIME TJ = 25°C, IS = 7A, di/dt ≤ = -100A/μsec, REVERSE RECOVERY CHARGE VDD ≤ 50V INPUT CAPACITANCE VGS = 0V, VDS = 25V, OUTPUT CAPACITANCE f = 1.0MHz REVERSE TRANSFER CAPACITANCE SYMBOL BVDSS MIN. 500 RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(ON) tr td(OFF) tf IS VSD trr Qrr Ciss Coss Crss 2.0 TYP. 7.7 0.85 4.0 25 250 100 -100 68.5 12.5 42.4 MAX. UNITS Volts Ω Volts S(1/Ω) μA nA nC - - 21 73 72 51 7 - nsec 1.5 970 Amps Volts nsec μC pF - 1300 310 120 8.9 - ©2002 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. C MECHANICAL DIMENSIONS: in Inches / mm .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) SHD226405 SHD226405B .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) .717 (18.21 .687 17.45) 1 2 3 .537 (13.64 .527 13.39) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) .060(1.52)R 1 2 3 .120(3.05) BSC .170(4.32) .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .250(6.35) Min .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC Lead Form Option B TO-257 PINOUT TABLE DEVICE TYPE MOSFET IN A TO-257 PACKAGE SUFFIX "R" VERSION PIN 1 DRAIN GATE PIN 2 SOURCE DRAIN PIN 3 GATE SOURCE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2002 Sensitron Semiconductor • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • sales@sensitron.com •