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SHD226413

SHD226413

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD226413 - HERMETIC POWER MOSFET N-CHANNEL - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SHD226413 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 686, REV. - SHD226413 HERMETIC POWER MOSFET N-CHANNEL (PRELIMINARY) DESCRIPTION: 30 VOLT, 20 AMP, 0.02 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG R JC PD ¡ VGS=10V, TC = 25•C VGS=10V, TC = 100•C PULSED DRAIN CURRENT @ TC = 25•C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25•C MIN. -55 - TYP. - MAX. –15 20 20 100 +150 UNITS Volts Amps Amps(pk) •C •C/W Watts ELECTRICAL CHARACTERISTICS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250mA DRAIN TO SOURCE ON STATE RESISTANCE ID = 10A, VGS = 5.0V@TJ = 25•C FORWARD TRANSCONDUCTANCE VDS = 3.0Vdc, IDS = 37.5A ZERO GATE VOLTAGE DRAIN CURRENT VDS = 30Vdc, VGS = 0Vdc VDS = 30Vdc VGS = 0Vdc, TJ = 125•C GATE TO BODY LEAKAGE CURRENT VGS = –20Vdc, VDS = 0Vdc TOTAL GATE CHARGE (VGS = 5.0 Vdc, GATE TO SOURCE CHARGE VDS = 24Vdc, GATE TO DRAIN CHARGE ID = 75Adc) BVDSS RDS(ON) gfs IDSS IGSS Qg Qgs Qgd td(ON) tr td(ON) tf VSD trr Qrr Ciss Coss Crss 30 15 - 6.0 55 .05 20 10 100 +100 -100 122 28 66 48 986 120 300 1.1 5635 1894 430 Volts mW S(1/W) mA - 61 14 33 nA nC TURN ON DELAY TIME (VDS = 15V, RISE TIME ID = 75Adc, TURN OFF DELAY TIME VGS = 5.0 Vdc, FALL TIME RG = 4.7W) FORWARD VOLTAGE, (IS = 4.7Adc, VGS = 0V) (IS = 75Adc, VGS = 0Vdc, TJ = 125•C) REVERSE RECOVERY TIME (IS = 75Adc, VGS = 0Vdc REVERSE RECOVERY CHARGE di/dt = 100A/msec) INPUT CAPACITANCE (VDS = 25 Vdc, OUTPUT CAPACITANCE VGS = 0 Vdc, REVERSE TRANSFER CAPACITANCE f = 1 MHz) *Note: Current limited by pin diameter. - - 24 493 60 149 0.97 0.87 58 .088 4025 1353 307 nsec Volts nsec mC pF   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com               SHD226413 SENSITRON DATA SHEET 686 REVISION MECHANICAL DIMENSIONS: in Inches / mm .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PINOUT TABLE DEVICE TYPE MOSFET IN A TO-257 PACKAGE PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE   221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com               SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SHD226413
1. 物料型号: - 型号:SHD226413

2. 器件简介: - 描述:30伏特,20安培,0.02欧姆的N沟道MOSFET,封装在密封的TO-257封装中。

3. 引脚分配: - PIN1:DRAIN(漏极) - PIN2:SOURCE(源极) - PIN3:GATE(栅极)

4. 参数特性: - 最大额定值:在25°C环境温度下,除非另有说明。 - 栅源电压(VGS):±15伏特 - 连续漏极电流(ID):在VGS=10V,TC=25°C时为20安培;在VGS=10V,Tc=100°C时也为20安培。 - 脉冲漏极电流(IDM):在Tc=25°C时为100安培(峰值)。 - 工作和存储温度(TOP/TSTG):-55°C至+150°C。 - 结到外壳的热阻(RoJC):未提供具体数值。

5. 功能详解: - 漏源击穿电压(BVpss):30伏特。 - 漏源导通电阻(RDS(ON)):在ID=10A,Vas=5.0V@T=25°C时为6.0毫欧,最大为20毫欧。 - 前向跨导(gfs):在Vps=3.0Vdc,ID=37.5A时为15至55西门子。 - 零栅压漏极电流(Iloss):在Vps=30Vdc,VGs=0Vdc时为0.05至10安培;在Vps=30Vdc,VGs=0Vdc,T=125°C时为100安培。 - 栅体漏电流(IGss):在VGs=+20Vdc,Vps=0Vdc时为+100至-100纳安。 - 栅源电荷(Qgs)、栅漏电荷(Qgd)和总栅电荷(Qg):分别为61纳库、28纳库和66纳库。

6. 应用信息: - 该器件适用于需要高可靠性的应用场合,如核能控制、航空航天、交通设备、医疗设备和安全设备等。在这些应用中,应使用具有保证安全的半导体器件,或通过用户的故障安全预防措施或其他安排来确保安全。

7. 封装信息: - 封装类型:TO-257封装。
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