0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SHD239607

SHD239607

  • 厂商:

    SENSITRON

  • 封装:

  • 描述:

    SHD239607 - HERMETIC POWER MOSFET N-CHANNEL - Sensitron

  • 详情介绍
  • 数据手册
  • 价格&库存
SHD239607 数据手册
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - SHD239607 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG RθJC PD MIN. -55 TYP. MAX. ±20 20 80 +150 0.27 450 UNITS Volts Amps Amps °C °C/W Watts VGS=10V, TC = 25°C PULSED DRAIN CURRENT @ TC = 25°C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25°C ELECTRICAL CHARACTERISTICS CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250μA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 10A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250μA FORWARD TRANSCONDUCTANCE VDS = 10V, ID = 10A ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C (VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125°C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TOTAL GATE CHARGE VGS = 10 V, GATE TO SOURCE CHARGE VDS = 300V, GATE TO DRAIN CHARGE ID = 10A TURN ON DELAY TIME VDS = 300V, RISE TIME ID = 10A, TURN OFF DELAY TIME RG = 2.0Ω, FALL TIME VGS = 10V DIODE FORWARD VOLTAGE TJ = 25°C, IF = IS VGS = 0V REVERSE RECOVERY TIME TJ = 25°C, IF = IS, di/dt ≤ = 100A/μsec INPUT CAPACITANCE VGS = 0V, VDS = 25V, OUTPUT CAPACITANCE f=1MHz REVERSE TRANSFER CAPACITANCE SYMBOL BVDSS MIN. 600 RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(ON) tr td(OFF) tf VSD trr 2.0 11 TYP. 18 150 29 60 20 43 70 40 600 0.35 4.5 250 1000 100 -100 170 40 85 40 60 90 60 1.5 MAX. UNITS Volts Ω Volts S(1/Ω) μA nA nC - nsec - Volts nsec Ciss Coss Crss - 4500 420 140 pF • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SHD239607 SENSITRON DATA SHEET 623 REVISION - MECHANICAL DIMENSIONS: in Inches / mm .150±.007 (3.81±.178) .090±.003 (2.286±.0762 ) .040±.002 (1.016±.0508 ) .020±.002 (.508±.0508) .785±.005 (19.94±.127) 2 .594±.009 (15.09±.229) .257±.003 (6.53±.076) 2 1 .080±.003 (2.032±.076) 3 .487±.003 (12.37±.076) .200±.003 (5.08±.076) 2 SHD-6 PINOUT TABLE DEVICE TYPE MOSFET SHD-6 PACKAGE PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com •
SHD239607
### 物料型号 - 型号为SHD239607。

### 器件简介 - 该器件是一个600V N沟道功率MOSFET,具有0.35欧姆的导通电阻,隔离和密封,表面贴装封装,电气上等同于IXTM20N60。

### 引脚分配 - 引脚1(PIN1):漏极(DRAIN) - 引脚2(PIN2):源极(SOURCE) - 引脚3(PIN3):栅极(GATE)

### 参数特性 - 最大额定值: - 栅源电压(VGs):+20V - 连续漏电流(ID):20A - 脉冲漏电流(IDM):80A - 工作和储存温度(TcP/TSTG):-55至+150°C - 结到壳热阻(RBJC):0.27°C/W - 总器件耗散功率(PD):450W - 电气特性: - 漏源击穿电压(BVpss):600V - 漏源导通电阻(RDS(ON)):0.35Ω - 栅阈值电压(VGS(th)):2.0至4.5V - 前向跨导(gfs):11至18S(1/Ω) - 零栅源电压漏电流(IDSS):250至1000μA - 栅源漏电流(IGSS):+/-100nA - 总栅电荷(Qg):150至170nC - 栅源电荷(Qgs)和栅漏电荷(Qgd):40至85nC和29至60nC - 导通延迟时间(td(ON)):20至40ns - 关断延迟时间(td(OFF))和下降时间(tf):43至70ns和40ns - 二极管正向电压(VSD):1.5V - 反向恢复时间(tr):600ns - 输入电容(Ciss)、输出电容(Coss)和反向传输电容(Crss):4500至420pF和140pF

### 功能详解 - 该MOSFET具有高电压和低导通电阻的特性,适用于需要高功率、高效率的应用场合。其密封和隔离的特性也使其适用于恶劣环境。

### 应用信息 - 适用于高可靠性要求的应用,如核能控制、航空航天、交通设备、医疗设备和安全设备等。

### 封装信息 - 封装类型为SHD-6,具体尺寸和机械图纸详见PDF文档中的图表。
SHD239607 价格&库存

很抱歉,暂时无法提供与“SHD239607”相匹配的价格&库存,您可以联系我们找货

免费人工找货