SHD626150

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4234, REV. - SHD626150 SHD626150D SHD626150N SHD626150P HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES • NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR • High Temperature Option - Maximum operation & storage temperature can be increased to 250oC; use part number prefix as SHDT • High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at high frequency; use part number prefix SHDG • Ceramic Seal Option – For ceramic seals use part number prefix SHDC MAXIMUM RATINGS RATING PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part numbers with P and N suffixes) MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part numbers with Single and D suffixes) MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG O (t = 8.3ms, Sine) per leg, TC = 25 C MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG O (t = 10µs, Pulse) per leg, TC = 25 C MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg MAXIMUM POWER DISSIPATION, TC = 25 OC MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE For Common Cathode/Anode Configurations) MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. SYMBOL PIV IO IO IFRM IFSM MAX. 300 20 10 UNITS Volts Amps Amps 40 200 Amps Amps CT Pd RθJC Top, Tstg 660 40 4.8 pF W °C/W °C -55 to +175 ELECTRICAL CHARACTERISTICS CHARACTERISTIC MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 5 A PER LEG) Vf MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 10 A PER LEG) Vf TJ = 25 °C TJ =175 °C TJ = 25 °C TJ = 175 °C TYP 0.90 1.00 1.20 1.40 0.05 1.00 11.5 MAX. 1.20 1.30 1.40 1.80 0.25 2.00 N/A UNITS Volts Volts mA nC MAXIMUM REVERSE CURRENT (Ir @ 300V PIV PER LEG) TJ = 25 °C TJ = 175 °C TOTAL CAPACITIVE CHARGE (VR=300V IF=10A di/dt=500A/µs TJ=25°C) QC per leg • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4234, REV. - SHD626150 SHD626150D SHD626150N SHD626150P • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4234, REV. - SHD626150 SHD626150D SHD626150N SHD626150P MECHANICAL DIMENSIONS TO-257 .150 (3.81 Dia. .140 3.56) .420 (10.67 .410 10.41) .200 (5.08 .190 4.82) .045 (1.14 .035 0.89) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .665 (16.89 .645 16.38) .430 (10.92 .410 10.41) 1 2 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER/COMMON CATHODE (P) DUAL RECTIFIER/COMMON ANODE (N) DUAL RECTIFIER/DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/ CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE SCHEMATIC 1 2 3 1 2 3 1 2 3 3 2 DOUBLER 1 SINGLE COMMON CATHODE COMMON ANODE Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •